High-performance field emission based on nanostructured tin selenide for nanoscale vacuum transistorsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr07912a

Vacuum field effect transistors have been envisioned to hold the promise of replacing solid-state electronics when the ballistic transport of electrons in a nanoscale vacuum can enable significantly high switching speed and stability. However, it remains challenging to obtain high-performance and re...

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Hauptverfasser:	Nguyen, Huu Duy, Kang, Joon Sang, Li, Man, Hu, Yongjie
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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