Metal-agglomeration-suppressed growth of MoS and MoSe films with small sulfur and selenium molecules for high mobility field effect transistor applications

This work reports a breakthrough technique for achieving high quality and uniform molybdenum dichalcogenide (MoX 2 where X = S, Se) films on large-area wafers via metal-agglomeration-suppressed growth (MASG) with small chalcogen (X-) molecules at growth temperatures ( T G ) of 600 °C or lower. In or...

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Veröffentlicht in:	Nanoscale 2018-08, Vol.1 (32), p.15213-15221
Hauptverfasser:	Jung, Kwang Hoon, Yun, Sun Jin, Choi, Yongsuk, Cho, Jeong Ho, Lim, Jung Wook, Chai, Hyun-Jun, Cho, Dae-Hyung, Chung, Yong-Duck, Kim, Gayoung
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