Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD
This work presented a detailed study on epitaxial Ta-doped titania (TiO 2 :Ta) films deposited via a metal organic chemical vapor deposition method. The effects of Ta dopant concentration on the film microstructure and functional characteristics including electrical and optical properties were syste...
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| Veröffentlicht in: | CrystEngComm 2018, Vol.2 (36), p.5395-541 |
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| creator | Zhao, Wei He, Linan Feng, Xianjin Luan, Caina Ma, Jin |
| description | This work presented a detailed study on epitaxial Ta-doped titania (TiO
2
:Ta) films deposited
via
a metal organic chemical vapor deposition method. The effects of Ta dopant concentration on the film microstructure and functional characteristics including electrical and optical properties were systematically explored. The results indicated the deposited TiO
2
:Ta films exhibit high crystallization quality, good transparency (>92%) in the visible range, and tunable electrical properties. The maximum carrier mobility (15.4 cm
2
V
−1
s
−1
) and minimum resistivity (8.2 × 10
−2
Ω cm) were achieved at Ta concentrations of 1.0% and 4.0%, respectively. The optical band gaps of the deposited films increased from 3.48 to 3.57 eV with the increase of Ta concentration from 0 to 8.0%.
Epitaxial Ta-doped TiO
2
films deposited
via
MOCVD were found to exhibit much improved electrical properties compared to the intrinsic TiO
2
. |
| doi_str_mv | 10.1039/c8ce01072b |
| format | Article |
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2
:Ta) films deposited
via
a metal organic chemical vapor deposition method. The effects of Ta dopant concentration on the film microstructure and functional characteristics including electrical and optical properties were systematically explored. The results indicated the deposited TiO
2
:Ta films exhibit high crystallization quality, good transparency (>92%) in the visible range, and tunable electrical properties. The maximum carrier mobility (15.4 cm
2
V
−1
s
−1
) and minimum resistivity (8.2 × 10
−2
Ω cm) were achieved at Ta concentrations of 1.0% and 4.0%, respectively. The optical band gaps of the deposited films increased from 3.48 to 3.57 eV with the increase of Ta concentration from 0 to 8.0%.
Epitaxial Ta-doped TiO
2
films deposited
via
MOCVD were found to exhibit much improved electrical properties compared to the intrinsic TiO
2
.</description><identifier>ISSN: 1466-8033</identifier><identifier>EISSN: 1466-8033</identifier><identifier>DOI: 10.1039/c8ce01072b</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Carrier mobility ; Crystallization ; Electrical properties ; Metalorganic chemical vapor deposition ; Optical properties ; Organic chemicals ; Organic chemistry ; Titanium dioxide</subject><ispartof>CrystEngComm, 2018, Vol.2 (36), p.5395-541</ispartof><rights>Copyright Royal Society of Chemistry 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c384t-d0ddf56675cb9a2405009759cf0aeee74b655edd1e3f749724d3629a961791113</citedby><cites>FETCH-LOGICAL-c384t-d0ddf56675cb9a2405009759cf0aeee74b655edd1e3f749724d3629a961791113</cites><orcidid>0000-0002-7749-0752</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4014,27914,27915,27916</link.rule.ids></links><search><creatorcontrib>Zhao, Wei</creatorcontrib><creatorcontrib>He, Linan</creatorcontrib><creatorcontrib>Feng, Xianjin</creatorcontrib><creatorcontrib>Luan, Caina</creatorcontrib><creatorcontrib>Ma, Jin</creatorcontrib><title>Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD</title><title>CrystEngComm</title><description>This work presented a detailed study on epitaxial Ta-doped titania (TiO
2
:Ta) films deposited
via
a metal organic chemical vapor deposition method. The effects of Ta dopant concentration on the film microstructure and functional characteristics including electrical and optical properties were systematically explored. The results indicated the deposited TiO
2
:Ta films exhibit high crystallization quality, good transparency (>92%) in the visible range, and tunable electrical properties. The maximum carrier mobility (15.4 cm
2
V
−1
s
−1
) and minimum resistivity (8.2 × 10
−2
Ω cm) were achieved at Ta concentrations of 1.0% and 4.0%, respectively. The optical band gaps of the deposited films increased from 3.48 to 3.57 eV with the increase of Ta concentration from 0 to 8.0%.
Epitaxial Ta-doped TiO
2
films deposited
via
MOCVD were found to exhibit much improved electrical properties compared to the intrinsic TiO
2
.</description><subject>Carrier mobility</subject><subject>Crystallization</subject><subject>Electrical properties</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Optical properties</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Titanium dioxide</subject><issn>1466-8033</issn><issn>1466-8033</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNpNkM1LxDAQxYMouK5evAsBb2I10zRJc9S6fsDKHlw9eClpkkKX7rYmKbj_vXEr6mkeb368GR5Cp0CugFB5rXNtCRCRVntoAhnnSU4o3f-nD9GR9ytCIAMgE_T-Etygw-BUe4lta3VwjVYtVhuDuz7sdO-63rrQWI-7Gtu-Ceqzif5SJSZuDA7R2TQK10279rja4udF8XZ3jA5q1Xp78jOn6PV-tiwek_ni4am4mSea5llIDDGmZpwLpiup0owwQqRgUtdEWWtFVnHGrDFgaS0yKdLMUJ5KJTkICQB0is7H3Pjnx2B9KFfd4DbxZJlCTAPGZBqpi5HSrvPe2brsXbNWblsCKb-7K4u8mO26u43w2Qg7r3-5v27pF_RlajY</recordid><startdate>2018</startdate><enddate>2018</enddate><creator>Zhao, Wei</creator><creator>He, Linan</creator><creator>Feng, Xianjin</creator><creator>Luan, Caina</creator><creator>Ma, Jin</creator><general>Royal Society of Chemistry</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-7749-0752</orcidid></search><sort><creationdate>2018</creationdate><title>Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD</title><author>Zhao, Wei ; He, Linan ; Feng, Xianjin ; Luan, Caina ; Ma, Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c384t-d0ddf56675cb9a2405009759cf0aeee74b655edd1e3f749724d3629a961791113</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Carrier mobility</topic><topic>Crystallization</topic><topic>Electrical properties</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Optical properties</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Titanium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Wei</creatorcontrib><creatorcontrib>He, Linan</creatorcontrib><creatorcontrib>Feng, Xianjin</creatorcontrib><creatorcontrib>Luan, Caina</creatorcontrib><creatorcontrib>Ma, Jin</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>CrystEngComm</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, Wei</au><au>He, Linan</au><au>Feng, Xianjin</au><au>Luan, Caina</au><au>Ma, Jin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD</atitle><jtitle>CrystEngComm</jtitle><date>2018</date><risdate>2018</risdate><volume>2</volume><issue>36</issue><spage>5395</spage><epage>541</epage><pages>5395-541</pages><issn>1466-8033</issn><eissn>1466-8033</eissn><abstract>This work presented a detailed study on epitaxial Ta-doped titania (TiO
2
:Ta) films deposited
via
a metal organic chemical vapor deposition method. The effects of Ta dopant concentration on the film microstructure and functional characteristics including electrical and optical properties were systematically explored. The results indicated the deposited TiO
2
:Ta films exhibit high crystallization quality, good transparency (>92%) in the visible range, and tunable electrical properties. The maximum carrier mobility (15.4 cm
2
V
−1
s
−1
) and minimum resistivity (8.2 × 10
−2
Ω cm) were achieved at Ta concentrations of 1.0% and 4.0%, respectively. The optical band gaps of the deposited films increased from 3.48 to 3.57 eV with the increase of Ta concentration from 0 to 8.0%.
Epitaxial Ta-doped TiO
2
films deposited
via
MOCVD were found to exhibit much improved electrical properties compared to the intrinsic TiO
2
.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/c8ce01072b</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-7749-0752</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1466-8033 |
| ispartof | CrystEngComm, 2018, Vol.2 (36), p.5395-541 |
| issn | 1466-8033 1466-8033 |
| language | eng |
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| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| subjects | Carrier mobility Crystallization Electrical properties Metalorganic chemical vapor deposition Optical properties Organic chemicals Organic chemistry Titanium dioxide |
| title | Structural, electrical and optical properties of epitaxial Ta-doped titania films by MOCVD |
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