Magnetic-field effects in ambipolar transistors based on a bipolar molecular glassElectronic supplementary information (ESI) available: UV/Vis spectrum, identification of transport regimes, line shape of magnetoresistance and the value of B0 for different transport regimes. See DOI: 10.1039/c7qm00104e

We show for the first time magnetoresistance effects in ambipolar transistors based on a single amorphous organic thin-film. The active material is a low-molecular weight spirobifluorene-bridged bipolar molecular glass, namely N -[7-( N , N -diphenylamino)-9,9′-spirobifluoren-2-yl]- N ′-(2,5-di- ter...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Reichert, Thomas, Hagelstein, Georg, Saragi, Tobat P. I
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!