Efficient pure green emission from Er-doped Ga2O3 films
This study briefly reviews effect of the doping content on the structure, surface morphology, and optical properties of Er-doped Ga 2 O 3 films on sapphire and Si substrates grown via pulsed laser deposition. Temperature insensitive pure green luminescence has been demonstrated from these films. We...
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| creator | Chen, Zhengwei Saito, Katsuhiko Tanaka, Tooru Guo, Qixin |
| description | This study briefly reviews effect of the doping content on the structure, surface morphology, and optical properties of Er-doped Ga
2
O
3
films on sapphire and Si substrates grown
via
pulsed laser deposition. Temperature insensitive pure green luminescence has been demonstrated from these films. We succeeded in fabricating light-emitting devices (LEDs) based on Ga
2
O
3
:Er/Si heterojunctions. Bright pure green emission can be observed by the naked eye from the LEDs. The driven voltage of these LEDs is 6.2 V, which is lower than those of ZnO:Er/Si and GaN:Er/Si devices. In addition, we determined the values of the valence band offset and conduction band offset of the Ga
2
O
3
/Si heterojunctions. The results obtained in this study shall provide a useful guideline for the development of Si-based green LEDs using Ga
2
O
3
as the host materials for Er
3+
ions.
This review describes recent advances in the properties of Er-doped Ga
2
O
3
films and light-emitting devices based on these films. |
| doi_str_mv | 10.1039/c7ce00553a |
| format | Article |
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2
O
3
films on sapphire and Si substrates grown
via
pulsed laser deposition. Temperature insensitive pure green luminescence has been demonstrated from these films. We succeeded in fabricating light-emitting devices (LEDs) based on Ga
2
O
3
:Er/Si heterojunctions. Bright pure green emission can be observed by the naked eye from the LEDs. The driven voltage of these LEDs is 6.2 V, which is lower than those of ZnO:Er/Si and GaN:Er/Si devices. In addition, we determined the values of the valence band offset and conduction band offset of the Ga
2
O
3
/Si heterojunctions. The results obtained in this study shall provide a useful guideline for the development of Si-based green LEDs using Ga
2
O
3
as the host materials for Er
3+
ions.
This review describes recent advances in the properties of Er-doped Ga
2
O
3
films and light-emitting devices based on these films.</description><identifier>EISSN: 1466-8033</identifier><identifier>DOI: 10.1039/c7ce00553a</identifier><language>eng</language><creationdate>2017</creationdate><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,4025,27928,27929,27930</link.rule.ids></links><search><creatorcontrib>Chen, Zhengwei</creatorcontrib><creatorcontrib>Saito, Katsuhiko</creatorcontrib><creatorcontrib>Tanaka, Tooru</creatorcontrib><creatorcontrib>Guo, Qixin</creatorcontrib><title>Efficient pure green emission from Er-doped Ga2O3 films</title><description>This study briefly reviews effect of the doping content on the structure, surface morphology, and optical properties of Er-doped Ga
2
O
3
films on sapphire and Si substrates grown
via
pulsed laser deposition. Temperature insensitive pure green luminescence has been demonstrated from these films. We succeeded in fabricating light-emitting devices (LEDs) based on Ga
2
O
3
:Er/Si heterojunctions. Bright pure green emission can be observed by the naked eye from the LEDs. The driven voltage of these LEDs is 6.2 V, which is lower than those of ZnO:Er/Si and GaN:Er/Si devices. In addition, we determined the values of the valence band offset and conduction band offset of the Ga
2
O
3
/Si heterojunctions. The results obtained in this study shall provide a useful guideline for the development of Si-based green LEDs using Ga
2
O
3
as the host materials for Er
3+
ions.
This review describes recent advances in the properties of Er-doped Ga
2
O
3
films and light-emitting devices based on these films.</description><issn>1466-8033</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNp9j0tLAzEURoMgWGs37oX4A0ZvJo_JXUoZW6HQjV0PyeRGUjoPkrrw31tQcOfqbA6H72PsXsCTAInPfdMTgNbSXbGFUMZUFqS8YbelHAGEEgIWrGljTH2i8cznz0z8IxONnIZUSppGHvM08DZXYZop8I2r95LHdBrKHbuO7lRo9cslO7y27-tttdtv3tYvu-pYGzxXSnmHNUZj6mBQKiOtaLRFoYNHQvTG1Y1zNliERnsvkIAMeKmDVPayd8kef7q59N2c0-DyV_f3rJtDvDgP_znyG9w7TL4</recordid><startdate>2017</startdate><enddate>2017</enddate><creator>Chen, Zhengwei</creator><creator>Saito, Katsuhiko</creator><creator>Tanaka, Tooru</creator><creator>Guo, Qixin</creator><scope/></search><sort><creationdate>2017</creationdate><title>Efficient pure green emission from Er-doped Ga2O3 films</title><author>Chen, Zhengwei ; Saito, Katsuhiko ; Tanaka, Tooru ; Guo, Qixin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j269t-44ba929f662d69346381758915db9e99b6a27aa8d89075bb19e0e60b35d348803</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Zhengwei</creatorcontrib><creatorcontrib>Saito, Katsuhiko</creatorcontrib><creatorcontrib>Tanaka, Tooru</creatorcontrib><creatorcontrib>Guo, Qixin</creatorcontrib></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Zhengwei</au><au>Saito, Katsuhiko</au><au>Tanaka, Tooru</au><au>Guo, Qixin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Efficient pure green emission from Er-doped Ga2O3 films</atitle><date>2017</date><risdate>2017</risdate><volume>19</volume><issue>31</issue><spage>4448</spage><epage>4458</epage><pages>4448-4458</pages><eissn>1466-8033</eissn><abstract>This study briefly reviews effect of the doping content on the structure, surface morphology, and optical properties of Er-doped Ga
2
O
3
films on sapphire and Si substrates grown
via
pulsed laser deposition. Temperature insensitive pure green luminescence has been demonstrated from these films. We succeeded in fabricating light-emitting devices (LEDs) based on Ga
2
O
3
:Er/Si heterojunctions. Bright pure green emission can be observed by the naked eye from the LEDs. The driven voltage of these LEDs is 6.2 V, which is lower than those of ZnO:Er/Si and GaN:Er/Si devices. In addition, we determined the values of the valence band offset and conduction band offset of the Ga
2
O
3
/Si heterojunctions. The results obtained in this study shall provide a useful guideline for the development of Si-based green LEDs using Ga
2
O
3
as the host materials for Er
3+
ions.
This review describes recent advances in the properties of Er-doped Ga
2
O
3
films and light-emitting devices based on these films.</abstract><doi>10.1039/c7ce00553a</doi><tpages>11</tpages></addata></record> |
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| identifier | EISSN: 1466-8033 |
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| language | eng |
| recordid | cdi_rsc_primary_c7ce00553a |
| source | Royal Society Of Chemistry Journals; Alma/SFX Local Collection |
| title | Efficient pure green emission from Er-doped Ga2O3 films |
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