Efficient pure green emission from Er-doped Ga2O3 films

This study briefly reviews effect of the doping content on the structure, surface morphology, and optical properties of Er-doped Ga 2 O 3 films on sapphire and Si substrates grown via pulsed laser deposition. Temperature insensitive pure green luminescence has been demonstrated from these films. We succeeded in fabricating light-emitting devices (LEDs) based on Ga 2 O 3 :Er/Si heterojunctions. Bright pure green emission can be observed by the naked eye from the LEDs. The driven voltage of these LEDs is 6.2 V, which is lower than those of ZnO:Er/Si and GaN:Er/Si devices. In addition, we determined the values of the valence band offset and conduction band offset of the Ga 2 O 3 /Si heterojunctions. The results obtained in this study shall provide a useful guideline for the development of Si-based green LEDs using Ga 2 O 3 as the host materials for Er 3+ ions. This review describes recent advances in the properties of Er-doped Ga 2 O 3 films and light-emitting devices based on these films.