Electronic properties of TiO-based materials characterized by high Ti self-doping and low recombination rate of electron-hole pairs

Factors tuning the functional performances of the various TiO 2 -based materials in the wide range of their possible applications are poorly understood. Here the electronic structure of TiO 2 -based materials characterized by Ti 3+ self-doping, obtained by a sol-gel route wholly performed in air at...

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Veröffentlicht in:	RSC advances 2017-01, Vol.7 (4), p.2373-2381
Hauptverfasser:	Aronne, A, Fantauzzi, M, Imparato, C, Atzei, D, De Stefano, L, D'Errico, G, Sannino, F, Rea, I, Pirozzi, D, Elsener, B, Pernice, P, Rossi, A
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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