Surface chemistry and density distribution influence on visible luminescence of silicon quantum dots: an experimental and theoretical approachThe authors would like to dedicate this article to one of the co-authors: Dr Betsabée Marel Monroy Peláez. Very sadly after a long battle with cancer her soul departed us on the 16th of October 2016 at the age of 38.Electronic supplementary information (ESI) available: Absorption spectra, profilometry and frontier molecular orbital diagrams of (H, H, H) cl
The impact of the surface reconstruction of the density distribution and photoluminescence of silicon quantum dots (QDs) embedded in a silicon oxide matrix (SiO x ) has been studied. Annealing treatments carried out on the as-deposited samples provoked the effusion of hydrogen species. Moreover, dep...
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Zusammenfassung: | The impact of the surface reconstruction of the density distribution and photoluminescence of silicon quantum dots (QDs) embedded in a silicon oxide matrix (SiO
x
) has been studied. Annealing treatments carried out on the as-deposited samples provoked the effusion of hydrogen species. Moreover, depending on the surrounding density and coalescence of QDs, they resulted in a change in the average size of the particles depending on the initial local environment. The shift in the luminescence spectra all over the visible region (blue, green and red) shows a strong dependence on the resultant change in the size and/or the passivation environment of QDs. Density functional theoretical (DFT) calculations support this fact and explain the possible electronic transitions (HOMO-LUMO gap) involved. Passivation in the presence of oxygen species lowers the band gap of Si
29
and Si
35
nanoclusters up to 1.7 eV, whereas, surface passivation in the environment of hydrogen species increases the band gap up to 4.4 eV. These results show a good agreement with the quantum confinement model described in this work and explain the shift in the luminescence all over the visible region. The results reported here offer vital insight into the mechanism of emission from silicon quantum dots which has been one of the most debated topics in the last two decades. QDs with multiple size distribution in different local environments (band gap) observed in this work could be used for the fabrication of light emission diodes (LEDs) or shift-conversion thin films in third generation efficient tandem solar cells for the maximum absorption of the solar spectrum in different wavelength regions.
Visible luminescence and hence the mechanism of emission from Si QDs depending on the size and/or the passivation environment are presented. |
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ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/c6cp07398k |