Global simulation of an RF Czochralski furnace during different stages of germanium single crystal growth

The mass and heat transfer in an inductively heated Czochralski crystal growth furnace during a crystal growth process is investigated numerically for a germanium semiconductor. The RF coil position is fixed at all growth stages. The results show that the temperature and velocity fields are changed, and the convexity of the crystal-melt interface increases with the grown crystal length. The temperature difference in the melt is about 50-60 K and the melt at the bottom of the crucible is crystallized. For accurate prediction of the temperature field within the germanium single crystal and the shape of the melt/crystal interface in an induction heating Cz system, melt convection has been taken into account in the simulation completely.