Bismuth nanowire thermoelectrics
During the past 20 years, the thermoelectric properties of nanostructures such as one-dimensional bismuth (Bi) platforms have prompted the development of a wide variety of nanowire growth methods, aiming to achieve higher energy-conversion efficiency. Most of these methods have demonstrated single-c...
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| Veröffentlicht in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-01, Vol.3 (46), p.11999-1213 |
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| container_issue | 46 |
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| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 3 |
| creator | Kim, Jeongmin Shim, Wooyoung Lee, Wooyoung |
| description | During the past 20 years, the thermoelectric properties of nanostructures such as one-dimensional bismuth (Bi) platforms have prompted the development of a wide variety of nanowire growth methods, aiming to achieve higher energy-conversion efficiency. Most of these methods have demonstrated single-crystal nanowire growth of a quality unmatched in bulk Bi. However, in contrast to the theoretical expectation that Bi nanowires should exhibit high thermoelectric performance, their observed thermoelectric properties have prevented their technological exploitation. Here, we review the current progress in the thermoelectrics of bismuth nanowires, the fundamentals of their advantage and limitation over bulk Bi, and their potential use for enhancing the thermoelectric performance.
Here, we review the current progress in the thermoelectrics of bismuth nanowires, the fundamentals of their advantage and limitation over bulk Bi, and their potential use for enhancing thermoelectric performance. |
| doi_str_mv | 10.1039/c5tc02886h |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_rsc_p</sourceid><recordid>TN_cdi_rsc_primary_c5tc02886h</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1835567043</sourcerecordid><originalsourceid>FETCH-LOGICAL-c419t-c944ecc2c10363331b46c0dbe5497956714ffa6053711d663ad636e7b1f32aa33</originalsourceid><addsrcrecordid>eNp9kE1LxDAQhoMouKx78S7UmwjVpJOk7VHL6goLXtZzSKcJrfRjTVLEf2_XynpzLjPwPrwMDyGXjN4xCvk9ioA0yTJZn5BFQgWNUwH89Hgn8pysvH-n02RMZjJfkOix8d0Y6qjX_fDZOBOF2rhuMK3B4Br0F-TM6tab1e9ekren9a7YxNvX55fiYRsjZ3mIMefcICY4fSIBgJVcIq1KI3ie5kKmjFurJRWQMlZJCbqSIE1aMguJ1gBLcjP37t3wMRofVNd4NG2rezOMXrEMxFRD-QG9nVF0g_fOWLV3Tafdl2JUHUyoQuyKHxObCb6aYefxyP2ZmvLr_3K1ryx8A4HXZBg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1835567043</pqid></control><display><type>article</type><title>Bismuth nanowire thermoelectrics</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Kim, Jeongmin ; Shim, Wooyoung ; Lee, Wooyoung</creator><creatorcontrib>Kim, Jeongmin ; Shim, Wooyoung ; Lee, Wooyoung</creatorcontrib><description>During the past 20 years, the thermoelectric properties of nanostructures such as one-dimensional bismuth (Bi) platforms have prompted the development of a wide variety of nanowire growth methods, aiming to achieve higher energy-conversion efficiency. Most of these methods have demonstrated single-crystal nanowire growth of a quality unmatched in bulk Bi. However, in contrast to the theoretical expectation that Bi nanowires should exhibit high thermoelectric performance, their observed thermoelectric properties have prevented their technological exploitation. Here, we review the current progress in the thermoelectrics of bismuth nanowires, the fundamentals of their advantage and limitation over bulk Bi, and their potential use for enhancing the thermoelectric performance.
Here, we review the current progress in the thermoelectrics of bismuth nanowires, the fundamentals of their advantage and limitation over bulk Bi, and their potential use for enhancing thermoelectric performance.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/c5tc02886h</identifier><language>eng</language><subject>Bismuth ; Electronic devices ; Exploitation ; Nanostructure ; Nanowires ; Platforms ; Single crystals ; Thermoelectricity</subject><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (46), p.11999-1213</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c419t-c944ecc2c10363331b46c0dbe5497956714ffa6053711d663ad636e7b1f32aa33</citedby><cites>FETCH-LOGICAL-c419t-c944ecc2c10363331b46c0dbe5497956714ffa6053711d663ad636e7b1f32aa33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Kim, Jeongmin</creatorcontrib><creatorcontrib>Shim, Wooyoung</creatorcontrib><creatorcontrib>Lee, Wooyoung</creatorcontrib><title>Bismuth nanowire thermoelectrics</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>During the past 20 years, the thermoelectric properties of nanostructures such as one-dimensional bismuth (Bi) platforms have prompted the development of a wide variety of nanowire growth methods, aiming to achieve higher energy-conversion efficiency. Most of these methods have demonstrated single-crystal nanowire growth of a quality unmatched in bulk Bi. However, in contrast to the theoretical expectation that Bi nanowires should exhibit high thermoelectric performance, their observed thermoelectric properties have prevented their technological exploitation. Here, we review the current progress in the thermoelectrics of bismuth nanowires, the fundamentals of their advantage and limitation over bulk Bi, and their potential use for enhancing the thermoelectric performance.
Here, we review the current progress in the thermoelectrics of bismuth nanowires, the fundamentals of their advantage and limitation over bulk Bi, and their potential use for enhancing thermoelectric performance.</description><subject>Bismuth</subject><subject>Electronic devices</subject><subject>Exploitation</subject><subject>Nanostructure</subject><subject>Nanowires</subject><subject>Platforms</subject><subject>Single crystals</subject><subject>Thermoelectricity</subject><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LxDAQhoMouKx78S7UmwjVpJOk7VHL6goLXtZzSKcJrfRjTVLEf2_XynpzLjPwPrwMDyGXjN4xCvk9ioA0yTJZn5BFQgWNUwH89Hgn8pysvH-n02RMZjJfkOix8d0Y6qjX_fDZOBOF2rhuMK3B4Br0F-TM6tab1e9ekren9a7YxNvX55fiYRsjZ3mIMefcICY4fSIBgJVcIq1KI3ie5kKmjFurJRWQMlZJCbqSIE1aMguJ1gBLcjP37t3wMRofVNd4NG2rezOMXrEMxFRD-QG9nVF0g_fOWLV3Tafdl2JUHUyoQuyKHxObCb6aYefxyP2ZmvLr_3K1ryx8A4HXZBg</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>Kim, Jeongmin</creator><creator>Shim, Wooyoung</creator><creator>Lee, Wooyoung</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20150101</creationdate><title>Bismuth nanowire thermoelectrics</title><author>Kim, Jeongmin ; Shim, Wooyoung ; Lee, Wooyoung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c419t-c944ecc2c10363331b46c0dbe5497956714ffa6053711d663ad636e7b1f32aa33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Bismuth</topic><topic>Electronic devices</topic><topic>Exploitation</topic><topic>Nanostructure</topic><topic>Nanowires</topic><topic>Platforms</topic><topic>Single crystals</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Jeongmin</creatorcontrib><creatorcontrib>Shim, Wooyoung</creatorcontrib><creatorcontrib>Lee, Wooyoung</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Jeongmin</au><au>Shim, Wooyoung</au><au>Lee, Wooyoung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bismuth nanowire thermoelectrics</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2015-01-01</date><risdate>2015</risdate><volume>3</volume><issue>46</issue><spage>11999</spage><epage>1213</epage><pages>11999-1213</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>During the past 20 years, the thermoelectric properties of nanostructures such as one-dimensional bismuth (Bi) platforms have prompted the development of a wide variety of nanowire growth methods, aiming to achieve higher energy-conversion efficiency. Most of these methods have demonstrated single-crystal nanowire growth of a quality unmatched in bulk Bi. However, in contrast to the theoretical expectation that Bi nanowires should exhibit high thermoelectric performance, their observed thermoelectric properties have prevented their technological exploitation. Here, we review the current progress in the thermoelectrics of bismuth nanowires, the fundamentals of their advantage and limitation over bulk Bi, and their potential use for enhancing the thermoelectric performance.
Here, we review the current progress in the thermoelectrics of bismuth nanowires, the fundamentals of their advantage and limitation over bulk Bi, and their potential use for enhancing thermoelectric performance.</abstract><doi>10.1039/c5tc02886h</doi><tpages>15</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2050-7526 |
| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (46), p.11999-1213 |
| issn | 2050-7526 2050-7534 |
| language | eng |
| recordid | cdi_rsc_primary_c5tc02886h |
| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| subjects | Bismuth Electronic devices Exploitation Nanostructure Nanowires Platforms Single crystals Thermoelectricity |
| title | Bismuth nanowire thermoelectrics |
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