Compound defects and thermoelectric properties in ternary CuAgSe-based materialsElectronic supplementary information (ESI) available: Cycle measurements of electrical conductivity and thermopower for Cu0.98AgSe and CuAg0.98Se (Fig. S1); magnetic field dependence of longitudinal electrical resistivity ρxx, Hall resistivity ρxy, the calculated longitudinal conductivity σxx and Hall conductivity σxy of five samples from 300 K to 400 K (Fig. S2-S6); fitting parameters for six samples (Tables S1-S6);

CuAgSe is a narrow band gap semiconducting material with superior carrier mobility and low lattice thermal conductivity, which are important and useful for high thermoelectric performance. However, its electrical and thermal transport properties are greatly affected by ionic deficiencies or composit...

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Hauptverfasser:	Wang, Xiaobei, Qiu, Pengfei, Zhang, Tiansong, Ren, Dudi, Wu, Lihua, Shi, Xun, Yang, Jihui, Chen, Lidong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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