Surface-growth-mode-induced strain effects on the metal-insulator transition in epitaxial vanadium dioxide thin films

A series of high-quality vanadium dioxide (VO 2 ) epitaxial thin films on (0001)-oriented sapphire substrates with various thicknesses were fabricated using radio frequency (RF) magnetron sputtering techniques. Structural analysis revealed that an out-of-plane tensile strain (∼+0.035%) in the thinne...

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Veröffentlicht in:	RSC advances 2015-01, Vol.5 (98), p.8122-8128
Hauptverfasser:	Yang, Mengmeng, Yang, Yuanjun, Hong, Bin, Wang, Liangxin, Luo, Zhenlin, Li, Xiaoguang, Kang, Chaoyang, Li, Ming, Zong, Haitao, Gao, Chen
Format:	Artikel
Sprache:	eng
Schlagworte:	Epitaxial growth Epitaxy Metal-insulator transition Radio frequencies Substrates Thin films Vanadium dioxide Vanadium oxides
Online-Zugang:	Volltext
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