Atomic-scale dynamics of triangular hole growth in monolayer hexagonal boron nitride under electron irradiationElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr01473e

Atomic-scale dynamics of triangular hole growth in monolayer hexagonal boron nitride under electron irradiationElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr01473e

The production of holes by electron beam irradiation in hexagonal boron nitride (hBN), which has a lattice similar to that of graphene, is monitored over time using atomic resolution transmission electron microscopy. The holes appear to be initiated by the formation of a vacancy of boron and grow in...

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Hauptverfasser: Ryu, Gyeong Hee, Park, Hyo Ju, Ryou, Junga, Park, Jinwoo, Lee, Jongyeong, Kim, Gwangwoo, Shin, Hyeon Suk, Bielawski, Christopher W, Ruoff, Rodney S, Hong, Suklyun, Lee, Zonghoon
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creator Ryu, Gyeong Hee
Park, Hyo Ju
Ryou, Junga
Park, Jinwoo
Lee, Jongyeong
Kim, Gwangwoo
Shin, Hyeon Suk
Bielawski, Christopher W
Ruoff, Rodney S
Hong, Suklyun
Lee, Zonghoon
description The production of holes by electron beam irradiation in hexagonal boron nitride (hBN), which has a lattice similar to that of graphene, is monitored over time using atomic resolution transmission electron microscopy. The holes appear to be initiated by the formation of a vacancy of boron and grow in a manner that retains an overall triangular shape. The hole growth process involves the formation of single chains of B and N atoms and is accompanied by the ejection of atoms and bundles of atoms along the hole edges, as well as atom migration. These observations are compared to density functional theory calculations and molecular dynamics simulations. The production of holes by electron beam irradiation in hexagonal boron nitride is monitored over time using atomic resolution transmission electron microscopy.
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title Atomic-scale dynamics of triangular hole growth in monolayer hexagonal boron nitride under electron irradiationElectronic supplementary information (ESI) available. See DOI: 10.1039/c5nr01473e
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