Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE
Layers of β-Ga 2 O 3 in situ doped with Sn were grown on Al 2 O 3 (0001) and native β-Ga 2 O 3 (100) substrates by metal organic vapor phase epitaxy. Homoepitaxial growth of good-quality Sn-doped β-Ga 2 O 3 layers with rocking curve values comparable to that of Czochralski-grown β-Ga 2 O 3 substrate...
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