Highly sensitive and multispectral responsive phototransistor using tungsten-doped VO2 nanowires

Highly sensitive and multispectral responsive phototransistor using tungsten-doped VO2 nanowires

In this work, we report a novel and feasible strategy for the practical applications of one-dimensional ultrasensitive phototransistors made of tungsten-doped VO 2 single nanowires. The photoconductive response of the single nanowire device was investigated under different visible light excitations...

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Veröffentlicht in:Nanoscale 2014-07, Vol.6 (13), p.7619-7627
Hauptverfasser: Lu, Junpeng, Liu, Hongwei, Deng, Suzi, Zheng, Minrui, Wang, Yinghui, van Kan, Jeroen A, Tang, Sing Hai, Zhang, Xinhai, Sow, Chorng Haur, Mhaisalkar, Subodh G
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container_end_page 7627
container_issue 13
container_start_page 7619
container_title Nanoscale
container_volume 6
creator Lu, Junpeng
Liu, Hongwei
Deng, Suzi
Zheng, Minrui
Wang, Yinghui
van Kan, Jeroen A
Tang, Sing Hai
Zhang, Xinhai
Sow, Chorng Haur
Mhaisalkar, Subodh G
description In this work, we report a novel and feasible strategy for the practical applications of one-dimensional ultrasensitive phototransistors made of tungsten-doped VO 2 single nanowires. The photoconductive response of the single nanowire device was investigated under different visible light excitations (405 nm, 532 nm, and 660 nm). The phototransistor device exhibited ultrafast photoresponse, high responsivity, broad multispectral response, and rapid saturation characteristic curves. These promising results help to promote the applications of this material in nano-scale optoelectronic devices such as efficient multispectral phototransistors and optical switches. A superior phototransistor was fabricated from W-doped VO2 nanowires. The device exhibited ultrafast photoresponse, high responsivity and broadband response.
doi_str_mv 10.1039/c4nr00898g
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title Highly sensitive and multispectral responsive phototransistor using tungsten-doped VO2 nanowires
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