Evidence for the intrinsic nature of band-gap states electrochemically observed on atomically flat TiO2(110) surfacesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03280b
Using an ultra-high vacuum (UHV) electrochemistry approach with pulsed laser deposition (PLD), we investigated the band-gap state for TiO 2 (110). In the PLD chamber, a TiO 2 (110) surface was cleaned by annealing in O 2 enough for it to exhibit a sharp (1 × 1) reflection high energy electron diffra...
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creator | Takata, Shintaro Miura, Yoshihiro Matsumoto, Yuji |
description | Using an ultra-high vacuum (UHV) electrochemistry approach with pulsed laser deposition (PLD), we investigated the band-gap state for TiO
2
(110). In the PLD chamber, a TiO
2
(110) surface was cleaned by annealing in O
2
enough for it to exhibit a sharp (1 × 1) reflection high energy electron diffraction (RHEED) pattern. The cleaned TiO
2
(110)-(1 × 1) sample then underwent electrochemical measurements without exposure to air, showing the band-gap state at −0.14 V
vs.
Ag by Mott-Schottky plot analysis. The band-gap state gradually disappeared under UV illumination at +0.6 V
vs.
Ag due to photoetching, and reappeared on reduction in a vacuum and/or deposition of a fresh TiO
2
film. These results indicated that the electrochemically observed band-gap state for TiO
2
(110) was a defect state due to oxygen deficiency, most probably identical to that observed under UHV, which does not necessarily exist on the surface. A quantitative analysis of the defect density suggests that the origin of this defect state is not the surface bridging hydroxyls or oxygen vacancies, but rather the interstitial Ti
3+
ions in the subsurface region.
The intrinsic nature of the band-gap states of UHV-clean TiO
2
(110) single crystal and film surfaces was electrochemically investigated by an UHV-electrochemistry approach. |
doi_str_mv | 10.1039/c4cp03280b |
format | Article |
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2
(110). In the PLD chamber, a TiO
2
(110) surface was cleaned by annealing in O
2
enough for it to exhibit a sharp (1 × 1) reflection high energy electron diffraction (RHEED) pattern. The cleaned TiO
2
(110)-(1 × 1) sample then underwent electrochemical measurements without exposure to air, showing the band-gap state at −0.14 V
vs.
Ag by Mott-Schottky plot analysis. The band-gap state gradually disappeared under UV illumination at +0.6 V
vs.
Ag due to photoetching, and reappeared on reduction in a vacuum and/or deposition of a fresh TiO
2
film. These results indicated that the electrochemically observed band-gap state for TiO
2
(110) was a defect state due to oxygen deficiency, most probably identical to that observed under UHV, which does not necessarily exist on the surface. A quantitative analysis of the defect density suggests that the origin of this defect state is not the surface bridging hydroxyls or oxygen vacancies, but rather the interstitial Ti
3+
ions in the subsurface region.
The intrinsic nature of the band-gap states of UHV-clean TiO
2
(110) single crystal and film surfaces was electrochemically investigated by an UHV-electrochemistry approach.</description><identifier>ISSN: 1463-9076</identifier><identifier>EISSN: 1463-9084</identifier><identifier>DOI: 10.1039/c4cp03280b</identifier><language>eng</language><creationdate>2014-10</creationdate><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Takata, Shintaro</creatorcontrib><creatorcontrib>Miura, Yoshihiro</creatorcontrib><creatorcontrib>Matsumoto, Yuji</creatorcontrib><title>Evidence for the intrinsic nature of band-gap states electrochemically observed on atomically flat TiO2(110) surfacesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03280b</title><description>Using an ultra-high vacuum (UHV) electrochemistry approach with pulsed laser deposition (PLD), we investigated the band-gap state for TiO
2
(110). In the PLD chamber, a TiO
2
(110) surface was cleaned by annealing in O
2
enough for it to exhibit a sharp (1 × 1) reflection high energy electron diffraction (RHEED) pattern. The cleaned TiO
2
(110)-(1 × 1) sample then underwent electrochemical measurements without exposure to air, showing the band-gap state at −0.14 V
vs.
Ag by Mott-Schottky plot analysis. The band-gap state gradually disappeared under UV illumination at +0.6 V
vs.
Ag due to photoetching, and reappeared on reduction in a vacuum and/or deposition of a fresh TiO
2
film. These results indicated that the electrochemically observed band-gap state for TiO
2
(110) was a defect state due to oxygen deficiency, most probably identical to that observed under UHV, which does not necessarily exist on the surface. A quantitative analysis of the defect density suggests that the origin of this defect state is not the surface bridging hydroxyls or oxygen vacancies, but rather the interstitial Ti
3+
ions in the subsurface region.
The intrinsic nature of the band-gap states of UHV-clean TiO
2
(110) single crystal and film surfaces was electrochemically investigated by an UHV-electrochemistry approach.</description><issn>1463-9076</issn><issn>1463-9084</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqFjz9PwzAQxS0EEqWwsCMdWzuk2HUoLSsE0alDu0cX50yNHMeynUj9gnwuIvFvQILpnu7u_d4dY5eCzwSXqxuVK8_lfMmrIzYS-UJmK77Mj7_13eKUncX4yjkXt0KO2FvRm5qcItBtgLQnMC4F46JR4DB1gaDVUKGrsxf0EBMmikCWVAqt2lNjFFp7gLaKFHqqoXWAqf1qa4sJdmYznwjBpxC7oFFRLD78bgiJnfeWGnIJw2EIH85oMJkBMym26ylgj8ZiZWkGWyJ43Kzv4fe35-xEo4108VnH7Oqp2D08ZyGq0gfTDPDyZ12O2fVf89LXWv7HeAcxt3RC</recordid><startdate>20141022</startdate><enddate>20141022</enddate><creator>Takata, Shintaro</creator><creator>Miura, Yoshihiro</creator><creator>Matsumoto, Yuji</creator><scope/></search><sort><creationdate>20141022</creationdate><title>Evidence for the intrinsic nature of band-gap states electrochemically observed on atomically flat TiO2(110) surfacesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03280b</title><author>Takata, Shintaro ; Miura, Yoshihiro ; Matsumoto, Yuji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-rsc_primary_c4cp03280b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Takata, Shintaro</creatorcontrib><creatorcontrib>Miura, Yoshihiro</creatorcontrib><creatorcontrib>Matsumoto, Yuji</creatorcontrib></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Takata, Shintaro</au><au>Miura, Yoshihiro</au><au>Matsumoto, Yuji</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Evidence for the intrinsic nature of band-gap states electrochemically observed on atomically flat TiO2(110) surfacesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03280b</atitle><date>2014-10-22</date><risdate>2014</risdate><volume>16</volume><issue>45</issue><spage>24784</spage><epage>24789</epage><pages>24784-24789</pages><issn>1463-9076</issn><eissn>1463-9084</eissn><abstract>Using an ultra-high vacuum (UHV) electrochemistry approach with pulsed laser deposition (PLD), we investigated the band-gap state for TiO
2
(110). In the PLD chamber, a TiO
2
(110) surface was cleaned by annealing in O
2
enough for it to exhibit a sharp (1 × 1) reflection high energy electron diffraction (RHEED) pattern. The cleaned TiO
2
(110)-(1 × 1) sample then underwent electrochemical measurements without exposure to air, showing the band-gap state at −0.14 V
vs.
Ag by Mott-Schottky plot analysis. The band-gap state gradually disappeared under UV illumination at +0.6 V
vs.
Ag due to photoetching, and reappeared on reduction in a vacuum and/or deposition of a fresh TiO
2
film. These results indicated that the electrochemically observed band-gap state for TiO
2
(110) was a defect state due to oxygen deficiency, most probably identical to that observed under UHV, which does not necessarily exist on the surface. A quantitative analysis of the defect density suggests that the origin of this defect state is not the surface bridging hydroxyls or oxygen vacancies, but rather the interstitial Ti
3+
ions in the subsurface region.
The intrinsic nature of the band-gap states of UHV-clean TiO
2
(110) single crystal and film surfaces was electrochemically investigated by an UHV-electrochemistry approach.</abstract><doi>10.1039/c4cp03280b</doi><tpages>6</tpages></addata></record> |
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source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
title | Evidence for the intrinsic nature of band-gap states electrochemically observed on atomically flat TiO2(110) surfacesElectronic supplementary information (ESI) available. See DOI: 10.1039/c4cp03280b |
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