Sequential Bi-C bond activation reactions of BiEt3via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; E = Al, Ga, In}Dedicated to Prof. M. Jansen on the occasion of his 70th birthday.Electronic supplementary information (ESI) available: Experimental procedure and characterization of 1-5 including crystallographic data for 1-3 and 5. CCDC 1011108 (1), 1011107 (2), 1011105 (3), and 1011106 (5). For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c4cc0502
Two of the Bi-C bonds of BiEt 3 are sequentially activated by mono-valent RM {R = HC[C(Me)N(2,6-i-Pr 2 C 6 H 3 )] 2 ; M = Al, Ga, In}. The first Bi-C bond activation leads to the formation of insertion complexes, [RMEt(BiEt 2 )] (M = Al 1 ; Ga 2 ; In 3 ), whereas the consecutive second activation pr...
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| creator | Ganesamoorthy, C Bläser, D Wölper, C Schulz, S |
| description | Two of the Bi-C bonds of BiEt
3
are sequentially activated by mono-valent RM {R = HC[C(Me)N(2,6-i-Pr
2
C
6
H
3
)]
2
; M = Al, Ga, In}. The first Bi-C bond activation leads to the formation of insertion complexes, [RMEt(BiEt
2
)] (M = Al
1
; Ga
2
; In
3
), whereas the consecutive second activation proceeds through a reductive elimination of RMEt
2
(M = Al
4
, Ga
5
), elemental Bi and BiEt
3
.
Reactions of RM {R = HC[C(Me)N(2,6-i-Pr
2
C
6
H
3
)]
2
; M = Al, Ga, In} with BiEt
3
yield the insertion complexes [RMEt(BiEt
2
)] (M = Al
1
; Ga
2
; In
3
), which subsequently react to RMEt
2
, Bi and BiEt
3
at high temperature. |
| doi_str_mv | 10.1039/c4cc05028b |
| format | Article |
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3
are sequentially activated by mono-valent RM {R = HC[C(Me)N(2,6-i-Pr
2
C
6
H
3
)]
2
; M = Al, Ga, In}. The first Bi-C bond activation leads to the formation of insertion complexes, [RMEt(BiEt
2
)] (M = Al
1
; Ga
2
; In
3
), whereas the consecutive second activation proceeds through a reductive elimination of RMEt
2
(M = Al
4
, Ga
5
), elemental Bi and BiEt
3
.
Reactions of RM {R = HC[C(Me)N(2,6-i-Pr
2
C
6
H
3
)]
2
; M = Al, Ga, In} with BiEt
3
yield the insertion complexes [RMEt(BiEt
2
)] (M = Al
1
; Ga
2
; In
3
), which subsequently react to RMEt
2
, Bi and BiEt
3
at high temperature.</description><identifier>ISSN: 1359-7345</identifier><identifier>EISSN: 1364-548X</identifier><identifier>DOI: 10.1039/c4cc05028b</identifier><language>eng</language><creationdate>2014-09</creationdate><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Ganesamoorthy, C</creatorcontrib><creatorcontrib>Bläser, D</creatorcontrib><creatorcontrib>Wölper, C</creatorcontrib><creatorcontrib>Schulz, S</creatorcontrib><title>Sequential Bi-C bond activation reactions of BiEt3via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; E = Al, Ga, In}Dedicated to Prof. M. Jansen on the occasion of his 70th birthday.Electronic supplementary information (ESI) available: Experimental procedure and characterization of 1-5 including crystallographic data for 1-3 and 5. CCDC 1011108 (1), 1011107 (2), 1011105 (3), and 1011106 (5). For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c4cc0502</title><description>Two of the Bi-C bonds of BiEt
3
are sequentially activated by mono-valent RM {R = HC[C(Me)N(2,6-i-Pr
2
C
6
H
3
)]
2
; M = Al, Ga, In}. The first Bi-C bond activation leads to the formation of insertion complexes, [RMEt(BiEt
2
)] (M = Al
1
; Ga
2
; In
3
), whereas the consecutive second activation proceeds through a reductive elimination of RMEt
2
(M = Al
4
, Ga
5
), elemental Bi and BiEt
3
.
Reactions of RM {R = HC[C(Me)N(2,6-i-Pr
2
C
6
H
3
)]
2
; M = Al, Ga, In} with BiEt
3
yield the insertion complexes [RMEt(BiEt
2
)] (M = Al
1
; Ga
2
; In
3
), which subsequently react to RMEt
2
, Bi and BiEt
3
at high temperature.</description><issn>1359-7345</issn><issn>1364-548X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqFUk2P0zAQDQgklo8Ld6THLZGaEDdN213EAdKUFmlhtcsBCaHKdZyNV9442G5FQfxrfgDTzYqVAIEv9vObmTdvNEHwmKUJS7PDZ2IkRJqnw-n6dnDAsvEozkfTD3f27_wwnmSj_F5w37mLlA7Lpwe3fpzJzxvZesU1Xqm4wNq0Fbjwasu9Mi2s3APTOpiaIkqfbRWHap20f_KnJb6d4gUWxcciPJbR23A4GMcqPrHDYrzIok_D5yiJf6kHeM0HWLbfZ7JSgntZwRucWFMnOE7whpNAC6rvGwkjBHd7MZJolMMk9Q3Wyvqm4ruk1FJ4a1ol4DZdp-Ul-eF2R03Wxl72NsLybBmBb7nSfK3lEcovnbTqKlSjs0bIamMlOLkXDbdkiuivfTLJsjinekJvKtWeQ9idozxtzi3vGhKuuOcgNYrLrmrkCYpiVoCljLF0ipBFg2swQTj8BXKEGYF9Sv8xRphHCeZUi1ru-_mrmmpRLOegOEMzspA3Y-htw0mJ2bvlEX7fjofB3ZprJx9d3w-CJ_PyfbGIrROrjqZC01vdrFL2f_7pv_hVV9XZT4LRz_0</recordid><startdate>20140918</startdate><enddate>20140918</enddate><creator>Ganesamoorthy, C</creator><creator>Bläser, D</creator><creator>Wölper, C</creator><creator>Schulz, S</creator><scope/></search><sort><creationdate>20140918</creationdate><title>Sequential Bi-C bond activation reactions of BiEt3via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; E = Al, Ga, In}Dedicated to Prof. M. Jansen on the occasion of his 70th birthday.Electronic supplementary information (ESI) available: Experimental procedure and characterization of 1-5 including crystallographic data for 1-3 and 5. CCDC 1011108 (1), 1011107 (2), 1011105 (3), and 1011106 (5). For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c4cc0502</title><author>Ganesamoorthy, C ; Bläser, D ; Wölper, C ; Schulz, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-rsc_primary_c4cc05028b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ganesamoorthy, C</creatorcontrib><creatorcontrib>Bläser, D</creatorcontrib><creatorcontrib>Wölper, C</creatorcontrib><creatorcontrib>Schulz, S</creatorcontrib></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ganesamoorthy, C</au><au>Bläser, D</au><au>Wölper, C</au><au>Schulz, S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sequential Bi-C bond activation reactions of BiEt3via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; E = Al, Ga, In}Dedicated to Prof. M. Jansen on the occasion of his 70th birthday.Electronic supplementary information (ESI) available: Experimental procedure and characterization of 1-5 including crystallographic data for 1-3 and 5. CCDC 1011108 (1), 1011107 (2), 1011105 (3), and 1011106 (5). For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c4cc0502</atitle><date>2014-09-18</date><risdate>2014</risdate><volume>5</volume><issue>82</issue><spage>12382</spage><epage>12384</epage><pages>12382-12384</pages><issn>1359-7345</issn><eissn>1364-548X</eissn><abstract>Two of the Bi-C bonds of BiEt
3
are sequentially activated by mono-valent RM {R = HC[C(Me)N(2,6-i-Pr
2
C
6
H
3
)]
2
; M = Al, Ga, In}. The first Bi-C bond activation leads to the formation of insertion complexes, [RMEt(BiEt
2
)] (M = Al
1
; Ga
2
; In
3
), whereas the consecutive second activation proceeds through a reductive elimination of RMEt
2
(M = Al
4
, Ga
5
), elemental Bi and BiEt
3
.
Reactions of RM {R = HC[C(Me)N(2,6-i-Pr
2
C
6
H
3
)]
2
; M = Al, Ga, In} with BiEt
3
yield the insertion complexes [RMEt(BiEt
2
)] (M = Al
1
; Ga
2
; In
3
), which subsequently react to RMEt
2
, Bi and BiEt
3
at high temperature.</abstract><doi>10.1039/c4cc05028b</doi><tpages>3</tpages></addata></record> |
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| issn | 1359-7345 1364-548X |
| language | eng |
| recordid | cdi_rsc_primary_c4cc05028b |
| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| title | Sequential Bi-C bond activation reactions of BiEt3via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; E = Al, Ga, In}Dedicated to Prof. M. Jansen on the occasion of his 70th birthday.Electronic supplementary information (ESI) available: Experimental procedure and characterization of 1-5 including crystallographic data for 1-3 and 5. CCDC 1011108 (1), 1011107 (2), 1011105 (3), and 1011106 (5). For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c4cc0502 |
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