Nanorod assisted lateral epitaxial overgrowth of ZnO films in water at 90 °C

A novel method was used to grow epitaxial ZnO films by employing a nanorod assisted lateral epitaxial overgrowth process at a low growth temperature of 90 °C in water utilizing a continuous circulation reactor. The relatively smooth films had an epitaxial relationship with the sapphire substrate, as...

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Veröffentlicht in:	CrystEngComm 2014-01, Vol.16 (1), p.69-75
Hauptverfasser:	Le, H. Q, Goh, G. K. L, Liew, L.-L
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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