InGaAs/InAlAs single photon avalanche diode for 1550 nm photons

A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperatur...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Royal Society open science 2016-03, Vol.3 (3), p.150584-150584
Hauptverfasser:	Meng, Xiao, Xie, Shiyu, Zhou, Xinxin, Calandri, Niccolò, Sanzaro, Mirko, Tosi, Alberto, Tan, Chee Hing, Ng, Jo Shien
Format:	Artikel
Sprache:	eng
Schlagworte:	Engineering Fibre-Optic Telecommunication Photon Counting Research Article Single Photon Avalanche Diode
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page	150584
container_issue	3
container_start_page	150584
container_title	Royal Society open science
container_volume	3
creator	Meng, Xiao Xie, Shiyu Zhou, Xinxin Calandri, Niccolò Sanzaro, Mirko Tosi, Alberto Tan, Chee Hing Ng, Jo Shien
description	A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K−1. Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 108 Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.
doi_str_mv	10.1098/rsos.150584
format	Article
fullrecord	<record><control><sourceid>proquest_royal</sourceid><recordid>TN_cdi_royalsociety_journals_10_1098_rsos_150584</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_1c4f181604904257b13f4ee214d241eb</doaj_id><sourcerecordid>1780813228</sourcerecordid><originalsourceid>FETCH-LOGICAL-c572t-e2e39cab0ddafc32d0878cbcb07f208d2cd69f55809ba961d7eeb03b6fc361ca3</originalsourceid><addsrcrecordid>eNp9kc9v0zAUxyMEYtPYiTvKEQl1e_4VOxekaBqj0qRJDE4cLMd-aV2lcbGTSuXEhX-Uv4SUlKk9wOn5x8efZ71vlr0mcEWgVNcxhXRFBAjFn2XnFASfCQns-dH6LLtMaQUAI8ZkIV9mZ1RCURZcnmfVvLszVbqed1VbpTz5btFivlmGPnS52ZrWdHaJufPBYd6EmBMh4NePn936AKVX2YvGtAkvD_Ui-_Lh9vPNx9n9w938prqfWSFpP0OKrLSmBudMYxl1oKSyta1BNhSUo9YVZSOEgrI2ZUGcRKyB1cUIF8QadpHNJ68LZqU30a9N3OlgvP5zEOJCm9h726ImljdEkQJ4CZwKWRPWcERKuKOcYD263k-uzVCv0Vns-mjaE-npTeeXehG2mitKqFCj4O1BEMO3AVOv1z5ZbMdxYRiSJlKBIozSPfpuQm0MKUVsntoQ0PsM9T5DPWU40m-Of_bE_k1sBGACYtiN4w7WY7_TqzDEbtz-w_n1f08-PT48bplnGhQjILkkQn_3m0nBtE9pwLEeGU_svwEA4cg4</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1780813228</pqid></control><display><type>article</type><title>InGaAs/InAlAs single photon avalanche diode for 1550 nm photons</title><source>DOAJ Directory of Open Access Journals</source><source>Royal Society Open Access Journals</source><source>PubMed Central Open Access</source><source>EZB-FREE-00999 freely available EZB journals</source><source>PubMed Central</source><creator>Meng, Xiao ; Xie, Shiyu ; Zhou, Xinxin ; Calandri, Niccolò ; Sanzaro, Mirko ; Tosi, Alberto ; Tan, Chee Hing ; Ng, Jo Shien</creator><creatorcontrib>Meng, Xiao ; Xie, Shiyu ; Zhou, Xinxin ; Calandri, Niccolò ; Sanzaro, Mirko ; Tosi, Alberto ; Tan, Chee Hing ; Ng, Jo Shien</creatorcontrib><description>A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K−1. Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 108 Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.</description><identifier>ISSN: 2054-5703</identifier><identifier>EISSN: 2054-5703</identifier><identifier>DOI: 10.1098/rsos.150584</identifier><identifier>PMID: 27069647</identifier><language>eng</language><publisher>England: The Royal Society Publishing</publisher><subject>Engineering ; Fibre-Optic Telecommunication ; Photon Counting ; Research Article ; Single Photon Avalanche Diode</subject><ispartof>Royal Society open science, 2016-03, Vol.3 (3), p.150584-150584</ispartof><rights>2016</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c572t-e2e39cab0ddafc32d0878cbcb07f208d2cd69f55809ba961d7eeb03b6fc361ca3</citedby><cites>FETCH-LOGICAL-c572t-e2e39cab0ddafc32d0878cbcb07f208d2cd69f55809ba961d7eeb03b6fc361ca3</cites><orcidid>0000-0002-7061-9840</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4821258/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC4821258/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,864,885,2102,3322,27147,27924,27925,53791,53793,55555,55565</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/27069647$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Meng, Xiao</creatorcontrib><creatorcontrib>Xie, Shiyu</creatorcontrib><creatorcontrib>Zhou, Xinxin</creatorcontrib><creatorcontrib>Calandri, Niccolò</creatorcontrib><creatorcontrib>Sanzaro, Mirko</creatorcontrib><creatorcontrib>Tosi, Alberto</creatorcontrib><creatorcontrib>Tan, Chee Hing</creatorcontrib><creatorcontrib>Ng, Jo Shien</creatorcontrib><title>InGaAs/InAlAs single photon avalanche diode for 1550 nm photons</title><title>Royal Society open science</title><addtitle>R. Soc. open sci</addtitle><addtitle>R Soc Open Sci</addtitle><description>A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K−1. Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 108 Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.</description><subject>Engineering</subject><subject>Fibre-Optic Telecommunication</subject><subject>Photon Counting</subject><subject>Research Article</subject><subject>Single Photon Avalanche Diode</subject><issn>2054-5703</issn><issn>2054-5703</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kc9v0zAUxyMEYtPYiTvKEQl1e_4VOxekaBqj0qRJDE4cLMd-aV2lcbGTSuXEhX-Uv4SUlKk9wOn5x8efZ71vlr0mcEWgVNcxhXRFBAjFn2XnFASfCQns-dH6LLtMaQUAI8ZkIV9mZ1RCURZcnmfVvLszVbqed1VbpTz5btFivlmGPnS52ZrWdHaJufPBYd6EmBMh4NePn936AKVX2YvGtAkvD_Ui-_Lh9vPNx9n9w938prqfWSFpP0OKrLSmBudMYxl1oKSyta1BNhSUo9YVZSOEgrI2ZUGcRKyB1cUIF8QadpHNJ68LZqU30a9N3OlgvP5zEOJCm9h726ImljdEkQJ4CZwKWRPWcERKuKOcYD263k-uzVCv0Vns-mjaE-npTeeXehG2mitKqFCj4O1BEMO3AVOv1z5ZbMdxYRiSJlKBIozSPfpuQm0MKUVsntoQ0PsM9T5DPWU40m-Of_bE_k1sBGACYtiN4w7WY7_TqzDEbtz-w_n1f08-PT48bplnGhQjILkkQn_3m0nBtE9pwLEeGU_svwEA4cg4</recordid><startdate>20160301</startdate><enddate>20160301</enddate><creator>Meng, Xiao</creator><creator>Xie, Shiyu</creator><creator>Zhou, Xinxin</creator><creator>Calandri, Niccolò</creator><creator>Sanzaro, Mirko</creator><creator>Tosi, Alberto</creator><creator>Tan, Chee Hing</creator><creator>Ng, Jo Shien</creator><general>The Royal Society Publishing</general><general>The Royal Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>5PM</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-7061-9840</orcidid></search><sort><creationdate>20160301</creationdate><title>InGaAs/InAlAs single photon avalanche diode for 1550 nm photons</title><author>Meng, Xiao ; Xie, Shiyu ; Zhou, Xinxin ; Calandri, Niccolò ; Sanzaro, Mirko ; Tosi, Alberto ; Tan, Chee Hing ; Ng, Jo Shien</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c572t-e2e39cab0ddafc32d0878cbcb07f208d2cd69f55809ba961d7eeb03b6fc361ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Engineering</topic><topic>Fibre-Optic Telecommunication</topic><topic>Photon Counting</topic><topic>Research Article</topic><topic>Single Photon Avalanche Diode</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Meng, Xiao</creatorcontrib><creatorcontrib>Xie, Shiyu</creatorcontrib><creatorcontrib>Zhou, Xinxin</creatorcontrib><creatorcontrib>Calandri, Niccolò</creatorcontrib><creatorcontrib>Sanzaro, Mirko</creatorcontrib><creatorcontrib>Tosi, Alberto</creatorcontrib><creatorcontrib>Tan, Chee Hing</creatorcontrib><creatorcontrib>Ng, Jo Shien</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Royal Society open science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Meng, Xiao</au><au>Xie, Shiyu</au><au>Zhou, Xinxin</au><au>Calandri, Niccolò</au><au>Sanzaro, Mirko</au><au>Tosi, Alberto</au><au>Tan, Chee Hing</au><au>Ng, Jo Shien</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InGaAs/InAlAs single photon avalanche diode for 1550 nm photons</atitle><jtitle>Royal Society open science</jtitle><stitle>R. Soc. open sci</stitle><addtitle>R Soc Open Sci</addtitle><date>2016-03-01</date><risdate>2016</risdate><volume>3</volume><issue>3</issue><spage>150584</spage><epage>150584</epage><pages>150584-150584</pages><issn>2054-5703</issn><eissn>2054-5703</eissn><abstract>A single photon avalanche diode (SPAD) with an InGaAs absorption region, and an InAlAs avalanche region was designed and demonstrated to detect 1550 nm wavelength photons. The characterization included leakage current, dark count rate and single photon detection efficiency as functions of temperature from 210 to 294 K. The SPAD exhibited good temperature stability, with breakdown voltage dependence of approximately 45 mV K−1. Operating at 210 K and in a gated mode, the SPAD achieved a photon detection probability of 26% at 1550 nm with a dark count rate of 1 × 108 Hz. The time response of the SPAD showed decreasing timing jitter (full width at half maximum) with increasing overbias voltage, with 70 ps being the smallest timing jitter measured.</abstract><cop>England</cop><pub>The Royal Society Publishing</pub><pmid>27069647</pmid><doi>10.1098/rsos.150584</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-7061-9840</orcidid><oa>free_for_read</oa></addata></record>
fulltext	fulltext
identifier	ISSN: 2054-5703
ispartof	Royal Society open science, 2016-03, Vol.3 (3), p.150584-150584
issn	2054-5703 2054-5703
language	eng
recordid	cdi_royalsociety_journals_10_1098_rsos_150584
source	DOAJ Directory of Open Access Journals; Royal Society Open Access Journals; PubMed Central Open Access; EZB-FREE-00999 freely available EZB journals; PubMed Central
subjects	Engineering Fibre-Optic Telecommunication Photon Counting Research Article Single Photon Avalanche Diode
title	InGaAs/InAlAs single photon avalanche diode for 1550 nm photons
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T23%3A16%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_royal&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=InGaAs/InAlAs%20single%20photon%20avalanche%20diode%20for%201550%E2%80%85nm%20photons&rft.jtitle=Royal%20Society%20open%20science&rft.au=Meng,%20Xiao&rft.date=2016-03-01&rft.volume=3&rft.issue=3&rft.spage=150584&rft.epage=150584&rft.pages=150584-150584&rft.issn=2054-5703&rft.eissn=2054-5703&rft_id=info:doi/10.1098/rsos.150584&rft_dat=%3Cproquest_royal%3E1780813228%3C/proquest_royal%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1780813228&rft_id=info:pmid/27069647&rft_doaj_id=oai_doaj_org_article_1c4f181604904257b13f4ee214d241eb&rfr_iscdi=true