High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction

Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,00...

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Veröffentlicht in:	Proceedings of the National Academy of Sciences - PNAS 2023-01, Vol.120 (3), p.e2216672120-e2216672120
Hauptverfasser:	Zhuang, Xinming, Kim, Joon-Seok, Huang, Wei, Chen, Yao, Wang, Gang, Chen, Jianhua, Yao, Yao, Wang, Zhi, Liu, Fengjing, Yu, Junsheng, Cheng, Yuhua, Yang, Zaixing, Lauhon, Lincoln J, Marks, Tobin J, Facchetti, Antonio
Format:	Artikel
Sprache:	eng
Schlagworte:	Artificial Intelligence Automobile Driving Depletion Electric Power Supplies Electronics Electrooculography Fabrication Fluorides Homojunctions Humans Indium Indium oxides Internet of Things Inverters Metal oxides Oxides Physical Sciences Polyethyleneimine Power consumption Power management Power sources Semiconductor devices Signal monitoring Silicon Dioxide Silicon substrates Substrates Transistors Voltage Voltage gain Wearable technology
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