Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses

In this work, the sputtered deposited WOx/TaOx switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without an electroforming process. The memristor s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials 2022-12, Vol.15 (24), p.8858
Hauptverfasser: Mahata, Chandreswar, Pyo, Juyeong, Jeon, Beomki, Ismail, Muhammad, Kang, Myounggon, Kim, Sungjun
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 24
container_start_page 8858
container_title Materials
container_volume 15
creator Mahata, Chandreswar
Pyo, Juyeong
Jeon, Beomki
Ismail, Muhammad
Kang, Myounggon
Kim, Sungjun
description In this work, the sputtered deposited WOx/TaOx switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without an electroforming process. The memristor shows uniform switching characteristics, low switching voltages, and a high RON/ROFF ratio (~102). The transition from short-term plasticity (STP) to long-term potentiation (LTP) can be observed by increasing the pulse amplitude and number. Spike-rate-dependent plasticity (SRDP) and paired-pulse facilitation (PPF) learning processes were successfully emulated by sequential pulse trains. By reducing the pulse interval, the synaptic weight change increases due to the residual oxygen vacancy near the conductive filaments (CFs). This work explores mimicking the biological synaptic behavior and further development for next-generation neuromorphic applications.
doi_str_mv 10.3390/ma15248858
format Article
fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_9787645</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2758107991</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-10668965457359f73a4a1c1fb1ac2ef514a0baab18d3f172fb1ad9cf20ffbd703</originalsourceid><addsrcrecordid>eNpdkUtrHDEQhEVIiI3jS36BIJcQmFiP0esSMGY3Dhj24DU-ih6ttNYyI22kGcf-95mNTRK7L91QH0VThdBHSr5ybsjZAFSwVmuh36BjaoxsqGnbt__dR-i01h2Zh3OqmXmPjrgUQkrJjlG3zGWIadssi_d4PSXoeo_PE_R5i69_xdHdzSqOCd-uHs7WsHrAl370Je-m5MaYEw654MUw9TAewEXv3Vhyig5fPybYV18_oHcB-upPn_cJulku1heXzdXq-4-L86vGcc3HhhIptZGiFYoLExSHFqijoaPgmA-CtkA6gI7qDQ9UsYOwMS4wEkK3UYSfoG9PvvupG_zG-TQW6O2-xAHKo80Q7UslxTu7zffWKK1kK2aDz88GJf-cfB3tEKvzfQ_J56lapoSmRBlDZ_TTK3SXpzKn9oeSSrWMHagvT5Qrudbiw99nKLGH9uy_9vhvG3WMMg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2756774221</pqid></control><display><type>article</type><title>Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses</title><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>PubMed Central Open Access</source><source>MDPI - Multidisciplinary Digital Publishing Institute</source><source>PubMed Central</source><source>Free Full-Text Journals in Chemistry</source><creator>Mahata, Chandreswar ; Pyo, Juyeong ; Jeon, Beomki ; Ismail, Muhammad ; Kang, Myounggon ; Kim, Sungjun</creator><creatorcontrib>Mahata, Chandreswar ; Pyo, Juyeong ; Jeon, Beomki ; Ismail, Muhammad ; Kang, Myounggon ; Kim, Sungjun</creatorcontrib><description>In this work, the sputtered deposited WOx/TaOx switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without an electroforming process. The memristor shows uniform switching characteristics, low switching voltages, and a high RON/ROFF ratio (~102). The transition from short-term plasticity (STP) to long-term potentiation (LTP) can be observed by increasing the pulse amplitude and number. Spike-rate-dependent plasticity (SRDP) and paired-pulse facilitation (PPF) learning processes were successfully emulated by sequential pulse trains. By reducing the pulse interval, the synaptic weight change increases due to the residual oxygen vacancy near the conductive filaments (CFs). This work explores mimicking the biological synaptic behavior and further development for next-generation neuromorphic applications.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma15248858</identifier><identifier>PMID: 36556662</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Electric fields ; Electrodes ; Electroforming ; Filaments ; Heterojunctions ; Memory devices ; Memristors ; Metal oxides ; Plastic properties ; Pulse amplitude ; Random access memory ; Switching ; Synapses</subject><ispartof>Materials, 2022-12, Vol.15 (24), p.8858</ispartof><rights>2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>2022 by the authors. 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-10668965457359f73a4a1c1fb1ac2ef514a0baab18d3f172fb1ad9cf20ffbd703</citedby><cites>FETCH-LOGICAL-c383t-10668965457359f73a4a1c1fb1ac2ef514a0baab18d3f172fb1ad9cf20ffbd703</cites><orcidid>0000-0002-8880-8164 ; 0000-0003-4132-0038 ; 0000-0001-5443-6561</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787645/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9787645/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,315,728,781,785,886,27928,27929,53795,53797</link.rule.ids></links><search><creatorcontrib>Mahata, Chandreswar</creatorcontrib><creatorcontrib>Pyo, Juyeong</creatorcontrib><creatorcontrib>Jeon, Beomki</creatorcontrib><creatorcontrib>Ismail, Muhammad</creatorcontrib><creatorcontrib>Kang, Myounggon</creatorcontrib><creatorcontrib>Kim, Sungjun</creatorcontrib><title>Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses</title><title>Materials</title><description>In this work, the sputtered deposited WOx/TaOx switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without an electroforming process. The memristor shows uniform switching characteristics, low switching voltages, and a high RON/ROFF ratio (~102). The transition from short-term plasticity (STP) to long-term potentiation (LTP) can be observed by increasing the pulse amplitude and number. Spike-rate-dependent plasticity (SRDP) and paired-pulse facilitation (PPF) learning processes were successfully emulated by sequential pulse trains. By reducing the pulse interval, the synaptic weight change increases due to the residual oxygen vacancy near the conductive filaments (CFs). This work explores mimicking the biological synaptic behavior and further development for next-generation neuromorphic applications.</description><subject>Electric fields</subject><subject>Electrodes</subject><subject>Electroforming</subject><subject>Filaments</subject><subject>Heterojunctions</subject><subject>Memory devices</subject><subject>Memristors</subject><subject>Metal oxides</subject><subject>Plastic properties</subject><subject>Pulse amplitude</subject><subject>Random access memory</subject><subject>Switching</subject><subject>Synapses</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdkUtrHDEQhEVIiI3jS36BIJcQmFiP0esSMGY3Dhj24DU-ih6ttNYyI22kGcf-95mNTRK7L91QH0VThdBHSr5ybsjZAFSwVmuh36BjaoxsqGnbt__dR-i01h2Zh3OqmXmPjrgUQkrJjlG3zGWIadssi_d4PSXoeo_PE_R5i69_xdHdzSqOCd-uHs7WsHrAl370Je-m5MaYEw654MUw9TAewEXv3Vhyig5fPybYV18_oHcB-upPn_cJulku1heXzdXq-4-L86vGcc3HhhIptZGiFYoLExSHFqijoaPgmA-CtkA6gI7qDQ9UsYOwMS4wEkK3UYSfoG9PvvupG_zG-TQW6O2-xAHKo80Q7UslxTu7zffWKK1kK2aDz88GJf-cfB3tEKvzfQ_J56lapoSmRBlDZ_TTK3SXpzKn9oeSSrWMHagvT5Qrudbiw99nKLGH9uy_9vhvG3WMMg</recordid><startdate>20221212</startdate><enddate>20221212</enddate><creator>Mahata, Chandreswar</creator><creator>Pyo, Juyeong</creator><creator>Jeon, Beomki</creator><creator>Ismail, Muhammad</creator><creator>Kang, Myounggon</creator><creator>Kim, Sungjun</creator><general>MDPI AG</general><general>MDPI</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-8880-8164</orcidid><orcidid>https://orcid.org/0000-0003-4132-0038</orcidid><orcidid>https://orcid.org/0000-0001-5443-6561</orcidid></search><sort><creationdate>20221212</creationdate><title>Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses</title><author>Mahata, Chandreswar ; Pyo, Juyeong ; Jeon, Beomki ; Ismail, Muhammad ; Kang, Myounggon ; Kim, Sungjun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-10668965457359f73a4a1c1fb1ac2ef514a0baab18d3f172fb1ad9cf20ffbd703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Electric fields</topic><topic>Electrodes</topic><topic>Electroforming</topic><topic>Filaments</topic><topic>Heterojunctions</topic><topic>Memory devices</topic><topic>Memristors</topic><topic>Metal oxides</topic><topic>Plastic properties</topic><topic>Pulse amplitude</topic><topic>Random access memory</topic><topic>Switching</topic><topic>Synapses</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mahata, Chandreswar</creatorcontrib><creatorcontrib>Pyo, Juyeong</creatorcontrib><creatorcontrib>Jeon, Beomki</creatorcontrib><creatorcontrib>Ismail, Muhammad</creatorcontrib><creatorcontrib>Kang, Myounggon</creatorcontrib><creatorcontrib>Kim, Sungjun</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Access via ProQuest (Open Access)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mahata, Chandreswar</au><au>Pyo, Juyeong</au><au>Jeon, Beomki</au><au>Ismail, Muhammad</au><au>Kang, Myounggon</au><au>Kim, Sungjun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses</atitle><jtitle>Materials</jtitle><date>2022-12-12</date><risdate>2022</risdate><volume>15</volume><issue>24</issue><spage>8858</spage><pages>8858-</pages><issn>1996-1944</issn><eissn>1996-1944</eissn><abstract>In this work, the sputtered deposited WOx/TaOx switching layer has been studied for resistive random-access memory (RRAM) devices. Gradual SET and RESET behaviors with reliable device-to-device variability were obtained with DC voltage sweep cycling without an electroforming process. The memristor shows uniform switching characteristics, low switching voltages, and a high RON/ROFF ratio (~102). The transition from short-term plasticity (STP) to long-term potentiation (LTP) can be observed by increasing the pulse amplitude and number. Spike-rate-dependent plasticity (SRDP) and paired-pulse facilitation (PPF) learning processes were successfully emulated by sequential pulse trains. By reducing the pulse interval, the synaptic weight change increases due to the residual oxygen vacancy near the conductive filaments (CFs). This work explores mimicking the biological synaptic behavior and further development for next-generation neuromorphic applications.</abstract><cop>Basel</cop><pub>MDPI AG</pub><pmid>36556662</pmid><doi>10.3390/ma15248858</doi><orcidid>https://orcid.org/0000-0002-8880-8164</orcidid><orcidid>https://orcid.org/0000-0003-4132-0038</orcidid><orcidid>https://orcid.org/0000-0001-5443-6561</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1996-1944
ispartof Materials, 2022-12, Vol.15 (24), p.8858
issn 1996-1944
1996-1944
language eng
recordid cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_9787645
source Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; PubMed Central Open Access; MDPI - Multidisciplinary Digital Publishing Institute; PubMed Central; Free Full-Text Journals in Chemistry
subjects Electric fields
Electrodes
Electroforming
Filaments
Heterojunctions
Memory devices
Memristors
Metal oxides
Plastic properties
Pulse amplitude
Random access memory
Switching
Synapses
title Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapses
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T17%3A41%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Forming-Free%20Tunable%20Analog%20Switching%20in%20WOx/TaOx%20Heterojunction%20for%20Emulating%20Electronic%20Synapses&rft.jtitle=Materials&rft.au=Mahata,%20Chandreswar&rft.date=2022-12-12&rft.volume=15&rft.issue=24&rft.spage=8858&rft.pages=8858-&rft.issn=1996-1944&rft.eissn=1996-1944&rft_id=info:doi/10.3390/ma15248858&rft_dat=%3Cproquest_pubme%3E2758107991%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2756774221&rft_id=info:pmid/36556662&rfr_iscdi=true