Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance
The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic comp...
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| Veröffentlicht in: | Materials 2022-09, Vol.15 (19), p.6763 |
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| creator | Kim, Dongwook Lee, Hyeonju Kim, Bokyung Baang, Sungkeun Ejderha, Kadir Bae, Jin-Hyuk Park, Jaehoon |
| description | The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystallinity, and depth profile of the IZO semiconductor film were measured to analyze the correlation between the structural properties of IZO film and electrical performances of the IZO TFT. In addition, the stoichiometric and electrical properties of the IZO semiconductor films were analyzed using film density, atomic composition profile, and Hall effect measurements. Based on the structural and stoichiometric results for the IZO semiconductor, the doping effect of the IZO film with respect to the In molar ratio was theoretically explained. The atomic bonding structure by the In doping in solution-processed IZO semiconductor and resulting increase in free carriers are discussed through a simple bonding model and band gap formation energy. |
| doi_str_mv | 10.3390/ma15196763 |
| format | Article |
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Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystallinity, and depth profile of the IZO semiconductor film were measured to analyze the correlation between the structural properties of IZO film and electrical performances of the IZO TFT. In addition, the stoichiometric and electrical properties of the IZO semiconductor films were analyzed using film density, atomic composition profile, and Hall effect measurements. Based on the structural and stoichiometric results for the IZO semiconductor, the doping effect of the IZO film with respect to the In molar ratio was theoretically explained. The atomic bonding structure by the In doping in solution-processed IZO semiconductor and resulting increase in free carriers are discussed through a simple bonding model and band gap formation energy.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma15196763</identifier><identifier>PMID: 36234102</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Annealing ; Atomic bonding ; Atomic structure ; Chemical bonds ; Chemical reactions ; Composition ; Crystal defects ; Crystal structure ; Crystallinity ; Decomposition ; Depth profiling ; Dielectric films ; Doping ; Electric properties ; Electrical properties ; Energy gap ; Free energy ; Hall effect ; Heat of formation ; Indium ; Investigations ; Nitrates ; Plasma ; Semiconductor devices ; Semiconductors ; Silicon wafers ; Solvents ; Spectrum analysis ; Stoichiometry ; Thin film transistors ; Thin films ; Transistors ; Zinc ; Zinc oxide</subject><ispartof>Materials, 2022-09, Vol.15 (19), p.6763</ispartof><rights>COPYRIGHT 2022 MDPI AG</rights><rights>2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). 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Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystallinity, and depth profile of the IZO semiconductor film were measured to analyze the correlation between the structural properties of IZO film and electrical performances of the IZO TFT. In addition, the stoichiometric and electrical properties of the IZO semiconductor films were analyzed using film density, atomic composition profile, and Hall effect measurements. Based on the structural and stoichiometric results for the IZO semiconductor, the doping effect of the IZO film with respect to the In molar ratio was theoretically explained. The atomic bonding structure by the In doping in solution-processed IZO semiconductor and resulting increase in free carriers are discussed through a simple bonding model and band gap formation energy.</description><subject>Annealing</subject><subject>Atomic bonding</subject><subject>Atomic structure</subject><subject>Chemical bonds</subject><subject>Chemical reactions</subject><subject>Composition</subject><subject>Crystal defects</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Decomposition</subject><subject>Depth profiling</subject><subject>Dielectric films</subject><subject>Doping</subject><subject>Electric properties</subject><subject>Electrical properties</subject><subject>Energy gap</subject><subject>Free energy</subject><subject>Hall effect</subject><subject>Heat of formation</subject><subject>Indium</subject><subject>Investigations</subject><subject>Nitrates</subject><subject>Plasma</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>Silicon wafers</subject><subject>Solvents</subject><subject>Spectrum analysis</subject><subject>Stoichiometry</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>Transistors</subject><subject>Zinc</subject><subject>Zinc oxide</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNptkt9uFCEUxidGY5u1Nz4BiTfGZCp_hmG4MVm3VTdp0iZbb7whDHPY0szACkyjb-UjyrpNa41AAoHf93EOh6p6TfApYxK_nzThRLaiZc-qYyJlWxPZNM__Wh9VJynd4tIYIx2VL6sj1lLWEEyPq19rfwcpu63OLnhUxjKHyRn0MfjB-S3a5DibPEdAwaJNGOc9V1_FYCAlGNC6YPNUf3Pe1Jc_3ABoA0Vf1EUWYkJLY0L8Y5UDOgu7Bw1aBZ_BZ6R92coJnVsLpswliHwD6Dpqn1wqJugKog1x0t7Aq-qF1WOCk_t5UX39dH69-lJfXH5er5YXtWk4zjUnHesNBWNbEIJR0g_SSkuGlmlgIFmPje06zRtNGTWYCCwt74E1khPe9WxRfTj47uZ-gsGUQKMe1S66ScefKminnp54d6O24U5JLnBXyrGo3t4bxPB9Lm-sJpcMjKP2EOakqKClcFzQrqBv_kFvwxx9SW9PNVQw0vBHaqtHUM7bUO41e1O1FA0XDcaCFur0P1Tpw6EsYF3ZfyJ4dxCYGFKKYB9yJFjtv5h6_GLsN99vxCw</recordid><startdate>20220929</startdate><enddate>20220929</enddate><creator>Kim, Dongwook</creator><creator>Lee, Hyeonju</creator><creator>Kim, Bokyung</creator><creator>Baang, Sungkeun</creator><creator>Ejderha, Kadir</creator><creator>Bae, Jin-Hyuk</creator><creator>Park, Jaehoon</creator><general>MDPI AG</general><general>MDPI</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0003-3217-1309</orcidid></search><sort><creationdate>20220929</creationdate><title>Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance</title><author>Kim, Dongwook ; Lee, Hyeonju ; Kim, Bokyung ; Baang, Sungkeun ; Ejderha, Kadir ; Bae, Jin-Hyuk ; Park, Jaehoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c450t-5183bc2ecf6e77321bd9f9f1d63ae3e93b0cf88a54a232c01709f5be3495158b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Annealing</topic><topic>Atomic bonding</topic><topic>Atomic structure</topic><topic>Chemical bonds</topic><topic>Chemical reactions</topic><topic>Composition</topic><topic>Crystal defects</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Decomposition</topic><topic>Depth profiling</topic><topic>Dielectric films</topic><topic>Doping</topic><topic>Electric properties</topic><topic>Electrical properties</topic><topic>Energy gap</topic><topic>Free energy</topic><topic>Hall effect</topic><topic>Heat of formation</topic><topic>Indium</topic><topic>Investigations</topic><topic>Nitrates</topic><topic>Plasma</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>Silicon wafers</topic><topic>Solvents</topic><topic>Spectrum analysis</topic><topic>Stoichiometry</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>Transistors</topic><topic>Zinc</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Dongwook</creatorcontrib><creatorcontrib>Lee, Hyeonju</creatorcontrib><creatorcontrib>Kim, Bokyung</creatorcontrib><creatorcontrib>Baang, Sungkeun</creatorcontrib><creatorcontrib>Ejderha, Kadir</creatorcontrib><creatorcontrib>Bae, Jin-Hyuk</creatorcontrib><creatorcontrib>Park, Jaehoon</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Dongwook</au><au>Lee, Hyeonju</au><au>Kim, Bokyung</au><au>Baang, Sungkeun</au><au>Ejderha, Kadir</au><au>Bae, Jin-Hyuk</au><au>Park, Jaehoon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance</atitle><jtitle>Materials</jtitle><date>2022-09-29</date><risdate>2022</risdate><volume>15</volume><issue>19</issue><spage>6763</spage><pages>6763-</pages><issn>1996-1944</issn><eissn>1996-1944</eissn><abstract>The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystallinity, and depth profile of the IZO semiconductor film were measured to analyze the correlation between the structural properties of IZO film and electrical performances of the IZO TFT. In addition, the stoichiometric and electrical properties of the IZO semiconductor films were analyzed using film density, atomic composition profile, and Hall effect measurements. Based on the structural and stoichiometric results for the IZO semiconductor, the doping effect of the IZO film with respect to the In molar ratio was theoretically explained. The atomic bonding structure by the In doping in solution-processed IZO semiconductor and resulting increase in free carriers are discussed through a simple bonding model and band gap formation energy.</abstract><cop>Basel</cop><pub>MDPI AG</pub><pmid>36234102</pmid><doi>10.3390/ma15196763</doi><orcidid>https://orcid.org/0000-0003-3217-1309</orcidid><oa>free_for_read</oa></addata></record> |
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| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; PubMed Central Open Access; MDPI - Multidisciplinary Digital Publishing Institute; PubMed Central; Free Full-Text Journals in Chemistry |
| subjects | Annealing Atomic bonding Atomic structure Chemical bonds Chemical reactions Composition Crystal defects Crystal structure Crystallinity Decomposition Depth profiling Dielectric films Doping Electric properties Electrical properties Energy gap Free energy Hall effect Heat of formation Indium Investigations Nitrates Plasma Semiconductor devices Semiconductors Silicon wafers Solvents Spectrum analysis Stoichiometry Thin film transistors Thin films Transistors Zinc Zinc oxide |
| title | Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance |
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