Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact (Adv. Sci. 25/2022)

Phase Change Cells In article number 2202222 by Haomin Wang, Zhitang Song, and co‐workers, edge of graphene ribbons is used to address phase change materials. The highly scaled memory cells approach the extreme scaling limits of phase change materials technology, achieving ultralow power consumption, high programming speeds, outstanding low/high resistance ratios, and nice stability/endurance at a few‐nanometer bit dimensions. In addition, the demonstration of D flip‐flop working under 2.5 MHz represents a great advance for phase‐change random access memory to perform logic operations in low power consumption and opens up an avenue for in‐memory computing in future.