Copper antimony sulfide thin films for visible to near infrared photodetector applications

Ternary chalcostibite copper antimony sulfide (CuSbS ) is an emerging semiconductor material having applications in photovoltaics, energy storage and optoelectronics due to its high absorption coefficient, suitable bandgap, and it consists of non-toxic and earth abundant elements. CuSbS thin films a...

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Veröffentlicht in:RSC advances 2018-01, Vol.8 (54), p.31055-31065
Hauptverfasser: Vinayakumar, V, Shaji, S, Avellaneda, D, Aguilar-Martínez, J A, Krishnan, B
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container_issue 54
container_start_page 31055
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Shaji, S
Avellaneda, D
Aguilar-Martínez, J A
Krishnan, B
description Ternary chalcostibite copper antimony sulfide (CuSbS ) is an emerging semiconductor material having applications in photovoltaics, energy storage and optoelectronics due to its high absorption coefficient, suitable bandgap, and it consists of non-toxic and earth abundant elements. CuSbS thin films are prepared by combining chemical bath deposition (antimony sulfide (Sb S )) and thermal evaporation (copper (Cu)) followed by a heat treatment and their application as visible to near infrared photodetectors is reported. Crystalline structure, elemental composition, chemical state, morphology and optoelectronic properties of the films were characterized by various techniques. The effect of three different Cu thicknesses (CAS 20, CAS 30 and CAS 40 nm) on the photodetection properties are evaluated under illumination using light emitting diodes (LEDs) and a laser. The photodetectors fabricated are successfully tested under different wavelengths, power densities and applied voltage and their photoresponse cyclic stability for each wavelength of illumination was recorded. From the sensitivity calculations, the sample with 20 nm Cu thickness (CAS 20) showed higher detection sensitivity for visible to near infrared wavelengths. Better responsivity results were obtained for CAS 40 because of its improved crystallinity and phase purity. Photodetector properties such as sensitivity and responsivity are evaluated for all the samples. These results are beneficial for cost effective and environment friendly photodetectors and optoelectronic devices based on CuSbS thin films.
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CuSbS thin films are prepared by combining chemical bath deposition (antimony sulfide (Sb S )) and thermal evaporation (copper (Cu)) followed by a heat treatment and their application as visible to near infrared photodetectors is reported. Crystalline structure, elemental composition, chemical state, morphology and optoelectronic properties of the films were characterized by various techniques. The effect of three different Cu thicknesses (CAS 20, CAS 30 and CAS 40 nm) on the photodetection properties are evaluated under illumination using light emitting diodes (LEDs) and a laser. The photodetectors fabricated are successfully tested under different wavelengths, power densities and applied voltage and their photoresponse cyclic stability for each wavelength of illumination was recorded. From the sensitivity calculations, the sample with 20 nm Cu thickness (CAS 20) showed higher detection sensitivity for visible to near infrared wavelengths. Better responsivity results were obtained for CAS 40 because of its improved crystallinity and phase purity. Photodetector properties such as sensitivity and responsivity are evaluated for all the samples. These results are beneficial for cost effective and environment friendly photodetectors and optoelectronic devices based on CuSbS thin films.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/C8RA05662E</identifier><identifier>PMID: 35548774</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Absorptivity ; Antimony ; Chemical composition ; Chemistry ; Copper ; Crystal structure ; Crystallinity ; Energy gap ; Energy storage ; Heat treatment ; Illumination ; Light emitting diodes ; Morphology ; Near infrared radiation ; Optoelectronic devices ; Organic chemistry ; Organic light emitting diodes ; Photometers ; Photovoltaic cells ; Properties (attributes) ; Semiconductor materials ; Sensitivity analysis ; Solar cells ; Thin films ; Wavelengths</subject><ispartof>RSC advances, 2018-01, Vol.8 (54), p.31055-31065</ispartof><rights>This journal is © The Royal Society of Chemistry.</rights><rights>Copyright Royal Society of Chemistry 2018</rights><rights>This journal is © The Royal Society of Chemistry 2018 The Royal Society of Chemistry</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-4415733cd3b6d36897d12477531fc43509b070c23f6f3575d9c781783a62d9b23</citedby><cites>FETCH-LOGICAL-c406t-4415733cd3b6d36897d12477531fc43509b070c23f6f3575d9c781783a62d9b23</cites><orcidid>0000-0001-7745-0796 ; 0000-0002-6707-8051 ; 0000-0002-1454-3095 ; 0000-0001-5169-9964</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9085606/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9085606/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,864,885,27924,27925,53791,53793</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/35548774$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Vinayakumar, V</creatorcontrib><creatorcontrib>Shaji, S</creatorcontrib><creatorcontrib>Avellaneda, D</creatorcontrib><creatorcontrib>Aguilar-Martínez, J A</creatorcontrib><creatorcontrib>Krishnan, B</creatorcontrib><title>Copper antimony sulfide thin films for visible to near infrared photodetector applications</title><title>RSC advances</title><addtitle>RSC Adv</addtitle><description>Ternary chalcostibite copper antimony sulfide (CuSbS ) is an emerging semiconductor material having applications in photovoltaics, energy storage and optoelectronics due to its high absorption coefficient, suitable bandgap, and it consists of non-toxic and earth abundant elements. CuSbS thin films are prepared by combining chemical bath deposition (antimony sulfide (Sb S )) and thermal evaporation (copper (Cu)) followed by a heat treatment and their application as visible to near infrared photodetectors is reported. Crystalline structure, elemental composition, chemical state, morphology and optoelectronic properties of the films were characterized by various techniques. The effect of three different Cu thicknesses (CAS 20, CAS 30 and CAS 40 nm) on the photodetection properties are evaluated under illumination using light emitting diodes (LEDs) and a laser. The photodetectors fabricated are successfully tested under different wavelengths, power densities and applied voltage and their photoresponse cyclic stability for each wavelength of illumination was recorded. From the sensitivity calculations, the sample with 20 nm Cu thickness (CAS 20) showed higher detection sensitivity for visible to near infrared wavelengths. Better responsivity results were obtained for CAS 40 because of its improved crystallinity and phase purity. Photodetector properties such as sensitivity and responsivity are evaluated for all the samples. These results are beneficial for cost effective and environment friendly photodetectors and optoelectronic devices based on CuSbS thin films.</description><subject>Absorptivity</subject><subject>Antimony</subject><subject>Chemical composition</subject><subject>Chemistry</subject><subject>Copper</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Energy gap</subject><subject>Energy storage</subject><subject>Heat treatment</subject><subject>Illumination</subject><subject>Light emitting diodes</subject><subject>Morphology</subject><subject>Near infrared radiation</subject><subject>Optoelectronic devices</subject><subject>Organic chemistry</subject><subject>Organic light emitting diodes</subject><subject>Photometers</subject><subject>Photovoltaic cells</subject><subject>Properties (attributes)</subject><subject>Semiconductor materials</subject><subject>Sensitivity analysis</subject><subject>Solar cells</subject><subject>Thin films</subject><subject>Wavelengths</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><recordid>eNpdkU1LXjEQhUNpqWLd-ANKwE0pvG2-c7MpyIvVgiAU3bgJufnoG7k3uSa5gv--KVprnc0MMw-HMxwAjjD6ghFVX7fDzxPEhSCnb8A-QUxsCBLq7Yt5DxzWeot6CY6JwO_BHuWcDVKyfXCzzcviCzSpxTmnB1jXKUTnYdvFBEOc5gpDLvA-1jhOfZ1h8qbAmEIxxTu47HLLzjdvW8fMskzRmhZzqh_Au2Cm6g-f-gG4_n56tT3fXFye_dieXGwsQ6JtGMNcUmodHYWjYlDSYcKk5BQHyyhHakQSWUKDCJRL7pSVA5YDNYI4NRJ6AL496i7rOHtnfWrFTHopcTblQWcT9f-XFHf6V77XCg1cINEFPj0JlHy3-tr0HKv102SSz2vVRAg2INQ9dfT4FXqb15L6e5ogpagaCGGd-vxI2ZJrLT48m8FI_0lN_0utwx9f2n9G_2ZEfwPoq5Hq</recordid><startdate>20180101</startdate><enddate>20180101</enddate><creator>Vinayakumar, V</creator><creator>Shaji, S</creator><creator>Avellaneda, D</creator><creator>Aguilar-Martínez, J A</creator><creator>Krishnan, B</creator><general>Royal Society of Chemistry</general><general>The Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0001-7745-0796</orcidid><orcidid>https://orcid.org/0000-0002-6707-8051</orcidid><orcidid>https://orcid.org/0000-0002-1454-3095</orcidid><orcidid>https://orcid.org/0000-0001-5169-9964</orcidid></search><sort><creationdate>20180101</creationdate><title>Copper antimony sulfide thin films for visible to near infrared photodetector applications</title><author>Vinayakumar, V ; 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CuSbS thin films are prepared by combining chemical bath deposition (antimony sulfide (Sb S )) and thermal evaporation (copper (Cu)) followed by a heat treatment and their application as visible to near infrared photodetectors is reported. Crystalline structure, elemental composition, chemical state, morphology and optoelectronic properties of the films were characterized by various techniques. The effect of three different Cu thicknesses (CAS 20, CAS 30 and CAS 40 nm) on the photodetection properties are evaluated under illumination using light emitting diodes (LEDs) and a laser. The photodetectors fabricated are successfully tested under different wavelengths, power densities and applied voltage and their photoresponse cyclic stability for each wavelength of illumination was recorded. From the sensitivity calculations, the sample with 20 nm Cu thickness (CAS 20) showed higher detection sensitivity for visible to near infrared wavelengths. 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subjects Absorptivity
Antimony
Chemical composition
Chemistry
Copper
Crystal structure
Crystallinity
Energy gap
Energy storage
Heat treatment
Illumination
Light emitting diodes
Morphology
Near infrared radiation
Optoelectronic devices
Organic chemistry
Organic light emitting diodes
Photometers
Photovoltaic cells
Properties (attributes)
Semiconductor materials
Sensitivity analysis
Solar cells
Thin films
Wavelengths
title Copper antimony sulfide thin films for visible to near infrared photodetector applications
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