Ultrasensitive detection of low-ppm H2S gases based on palladium-doped porous silicon sensors

In this study, the sensing properties of palladium-doped porous silicon (Pd/p-Si) substrates for low-ppm level detection of toxic H2S gas are investigated. A Si substrate with dead-end pores ranging from nano- to macroscale was generated by a combined process of metal-assisted chemical etching (MacE...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	RSC advances 2018-01, Vol.8 (52), p.29995-30001
Hauptverfasser:	Nu Si A Eom, Hong-Baek, Cho, Lim, Hyo-Ryoung, Hwang, Tea-Yeon, Song, Yoseb, Yong-Ho Choa
Format:	Artikel
Sprache:	eng
Schlagworte:	Adsorbates Ammonia Catalysis Catalysts Chemical etching Chemisorption Chemistry Detection Electrochemical etching Electron beams Hydrogen sulfide Nitrogen dioxide Organic chemistry Palladium Porous silicon Reaction time Silicon substrates Surface area Thickness Workplaces
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!