Through-silicon via submount for the CuO/Cu2O nanostructured field emission display

A three dimensional (3D) field emission display structure was prepared using CuO/Cu2O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. Fo...

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Veröffentlicht in:	RSC advances 2018-01, Vol.8 (2), p.706-709
Hauptverfasser:	Chun-Liang, Lu, Chang, Shoou-Jinn, Ting-Jen Hsueh
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Copper oxides Field emission Integrated circuits Interconnections Nanowires Oxidation Phosphors Silicon
Online-Zugang:	Volltext
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