Through-silicon via submount for the CuO/Cu2O nanostructured field emission display

Through-silicon via submount for the CuO/Cu2O nanostructured field emission display

A three dimensional (3D) field emission display structure was prepared using CuO/Cu2O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. Fo...

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Veröffentlicht in:RSC advances 2018-01, Vol.8 (2), p.706-709
Hauptverfasser: Chun-Liang, Lu, Chang, Shoou-Jinn, Ting-Jen Hsueh
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Sprache:eng
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Chemistry
Copper oxides
Field emission
Integrated circuits
Interconnections
Nanowires
Oxidation
Phosphors
Silicon
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Ting-Jen Hsueh
description A three dimensional (3D) field emission display structure was prepared using CuO/Cu2O composite nanowires (NWs) and a three dimensional through silicon via (3D-TSV) technique. The experimental results indicated that the diameter and length of the Si via were about 100 μm and 200 μm, respectively. For the 3D field emission structure, high-density CuO/Cu2O composite nanowires (NWs) were grown on the concave TSV structure using thermal oxidation. The field emission turn-on field and enhancement factor of the CuO/Cu2O composite NWs were 15 V μm−1 and ∼1748, respectively. With regard to field emission displays, we successfully used the 3D field emission structure to excite the orange phosphors.
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subjects Chemistry
Copper oxides
Field emission
Integrated circuits
Interconnections
Nanowires
Oxidation
Phosphors
Silicon
title Through-silicon via submount for the CuO/Cu2O nanostructured field emission display
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