Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components

III-V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowire...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	RSC advances 2019-11, Vol.9 (65), p.38114-38118
Hauptverfasser:	Li, Haolin, Tang, Jilong, Pang, Guotao, Wang, Dengkui, Fang, Xuan, Chen, Rui, Wei, Zhipeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry Epitaxial growth Gallium arsenide Molecular beam epitaxy Molecular structure Nanowires Optical properties Optoelectronic devices Photoluminescence Quantum wells Room temperature Temperature dependence Ternary alloys
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!