Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components
III-V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowire...
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| Veröffentlicht in: | RSC advances 2019-11, Vol.9 (65), p.38114-38118 |
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| creator | Li, Haolin Tang, Jilong Pang, Guotao Wang, Dengkui Fang, Xuan Chen, Rui Wei, Zhipeng |
| description | III-V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowires show many special properties compared to their quantum well structures. In this work, GaAs/GaAs
1−
x
Sb
x
/GaAs coaxial single quantum-well nanowires with different Sb composition were grown by molecular beam epitaxy. The band structure and the optical properties were investigated through power-dependent and temperature-dependent photoluminescence measurement. It has been found that a deeper quantum well is created with the increase of Sb component. Thanks to the deeper quantum well, more effective electron confinement has been realized, the emission from the sample can still be detected up to room temperature. The different trend of peak position and shape at various temperatures also supports the improved temperature stability of the samples. These results will be beneficial for the design of alloy quantum wells, and will facilitate the development of alloy quantum-well based devices.
GaAs/GaAs
1−
x
Sb
x
/GaAs coaxial single quantum-well nanowires with larger Sb content result in better electron confinement, which greatly improves their thermal stability. |
| doi_str_mv | 10.1039/c9ra08451g |
| format | Article |
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1−
x
Sb
x
/GaAs coaxial single quantum-well nanowires with different Sb composition were grown by molecular beam epitaxy. The band structure and the optical properties were investigated through power-dependent and temperature-dependent photoluminescence measurement. It has been found that a deeper quantum well is created with the increase of Sb component. Thanks to the deeper quantum well, more effective electron confinement has been realized, the emission from the sample can still be detected up to room temperature. The different trend of peak position and shape at various temperatures also supports the improved temperature stability of the samples. These results will be beneficial for the design of alloy quantum wells, and will facilitate the development of alloy quantum-well based devices.
GaAs/GaAs
1−
x
Sb
x
/GaAs coaxial single quantum-well nanowires with larger Sb content result in better electron confinement, which greatly improves their thermal stability.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/c9ra08451g</identifier><identifier>PMID: 35541770</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Chemistry ; Epitaxial growth ; Gallium arsenide ; Molecular beam epitaxy ; Molecular structure ; Nanowires ; Optical properties ; Optoelectronic devices ; Photoluminescence ; Quantum wells ; Room temperature ; Temperature dependence ; Ternary alloys</subject><ispartof>RSC advances, 2019-11, Vol.9 (65), p.38114-38118</ispartof><rights>This journal is © The Royal Society of Chemistry.</rights><rights>Copyright Royal Society of Chemistry 2019</rights><rights>This journal is © The Royal Society of Chemistry 2019 The Royal Society of Chemistry</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c454t-de95a9ca49be026cca0258be0b543433bb79cb28489c7e911a280e0f1a8f23fb3</citedby><cites>FETCH-LOGICAL-c454t-de95a9ca49be026cca0258be0b543433bb79cb28489c7e911a280e0f1a8f23fb3</cites><orcidid>0000-0002-2926-8065 ; 0000-0002-0445-7847</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9075889/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9075889/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,864,885,27924,27925,53791,53793</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/35541770$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Haolin</creatorcontrib><creatorcontrib>Tang, Jilong</creatorcontrib><creatorcontrib>Pang, Guotao</creatorcontrib><creatorcontrib>Wang, Dengkui</creatorcontrib><creatorcontrib>Fang, Xuan</creatorcontrib><creatorcontrib>Chen, Rui</creatorcontrib><creatorcontrib>Wei, Zhipeng</creatorcontrib><title>Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components</title><title>RSC advances</title><addtitle>RSC Adv</addtitle><description>III-V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowires show many special properties compared to their quantum well structures. In this work, GaAs/GaAs
1−
x
Sb
x
/GaAs coaxial single quantum-well nanowires with different Sb composition were grown by molecular beam epitaxy. The band structure and the optical properties were investigated through power-dependent and temperature-dependent photoluminescence measurement. It has been found that a deeper quantum well is created with the increase of Sb component. Thanks to the deeper quantum well, more effective electron confinement has been realized, the emission from the sample can still be detected up to room temperature. The different trend of peak position and shape at various temperatures also supports the improved temperature stability of the samples. These results will be beneficial for the design of alloy quantum wells, and will facilitate the development of alloy quantum-well based devices.
GaAs/GaAs
1−
x
Sb
x
/GaAs coaxial single quantum-well nanowires with larger Sb content result in better electron confinement, which greatly improves their thermal stability.</description><subject>Chemistry</subject><subject>Epitaxial growth</subject><subject>Gallium arsenide</subject><subject>Molecular beam epitaxy</subject><subject>Molecular structure</subject><subject>Nanowires</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>Photoluminescence</subject><subject>Quantum wells</subject><subject>Room temperature</subject><subject>Temperature dependence</subject><subject>Ternary alloys</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp9ks9vFCEUx4nR2GbtxbsG48WYjOXnDFxMNhtdTZo0sXomwMIuzQxMYcbV_17arWv1IAfeg--HBy9fAHiO0TuMqDy3MmskGMfbR-CUINY2BLXy8YP8BJyVco3qaDkmLX4KTijnDHcdOgXxcpyC1T20O521nVwOpW4UmDxc62U5v52uzF2ANukfobIlxG3v4M2s4zQPzd71PYw6pn3IrsB9mHZwE7x32cUJXpl6bhhTrIvyDDzxui_u7D4uwLePH76uPjUXl-vPq-VFYxlnU7NxkmtpNZPGIdJaqxHhouaGM8ooNaaT1hDBhLSdkxhrIpBDHmvhCfWGLsD7Q91xNoPb2Hp31r0acxh0_qmSDupvJYad2qbvSqKOCyFrgTf3BXK6mV2Z1BCKrY3q6NJcFGlbwhlqmajo63_Q6zTnWNtThOKOE0GqUwvw9kDZnErJzh8fg5G6dVKt5JflnZPrCr98-Pwj-tu3Crw4ALnYo_rnK1T91f90NW48_QWooa_l</recordid><startdate>20191121</startdate><enddate>20191121</enddate><creator>Li, Haolin</creator><creator>Tang, Jilong</creator><creator>Pang, Guotao</creator><creator>Wang, Dengkui</creator><creator>Fang, Xuan</creator><creator>Chen, Rui</creator><creator>Wei, Zhipeng</creator><general>Royal Society of Chemistry</general><general>The Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-2926-8065</orcidid><orcidid>https://orcid.org/0000-0002-0445-7847</orcidid></search><sort><creationdate>20191121</creationdate><title>Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components</title><author>Li, Haolin ; Tang, Jilong ; Pang, Guotao ; Wang, Dengkui ; Fang, Xuan ; Chen, Rui ; Wei, Zhipeng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c454t-de95a9ca49be026cca0258be0b543433bb79cb28489c7e911a280e0f1a8f23fb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Chemistry</topic><topic>Epitaxial growth</topic><topic>Gallium arsenide</topic><topic>Molecular beam epitaxy</topic><topic>Molecular structure</topic><topic>Nanowires</topic><topic>Optical properties</topic><topic>Optoelectronic devices</topic><topic>Photoluminescence</topic><topic>Quantum wells</topic><topic>Room temperature</topic><topic>Temperature dependence</topic><topic>Ternary alloys</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Haolin</creatorcontrib><creatorcontrib>Tang, Jilong</creatorcontrib><creatorcontrib>Pang, Guotao</creatorcontrib><creatorcontrib>Wang, Dengkui</creatorcontrib><creatorcontrib>Fang, Xuan</creatorcontrib><creatorcontrib>Chen, Rui</creatorcontrib><creatorcontrib>Wei, Zhipeng</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Haolin</au><au>Tang, Jilong</au><au>Pang, Guotao</au><au>Wang, Dengkui</au><au>Fang, Xuan</au><au>Chen, Rui</au><au>Wei, Zhipeng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components</atitle><jtitle>RSC advances</jtitle><addtitle>RSC Adv</addtitle><date>2019-11-21</date><risdate>2019</risdate><volume>9</volume><issue>65</issue><spage>38114</spage><epage>38118</epage><pages>38114-38118</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>III-V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowires show many special properties compared to their quantum well structures. In this work, GaAs/GaAs
1−
x
Sb
x
/GaAs coaxial single quantum-well nanowires with different Sb composition were grown by molecular beam epitaxy. The band structure and the optical properties were investigated through power-dependent and temperature-dependent photoluminescence measurement. It has been found that a deeper quantum well is created with the increase of Sb component. Thanks to the deeper quantum well, more effective electron confinement has been realized, the emission from the sample can still be detected up to room temperature. The different trend of peak position and shape at various temperatures also supports the improved temperature stability of the samples. These results will be beneficial for the design of alloy quantum wells, and will facilitate the development of alloy quantum-well based devices.
GaAs/GaAs
1−
x
Sb
x
/GaAs coaxial single quantum-well nanowires with larger Sb content result in better electron confinement, which greatly improves their thermal stability.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>35541770</pmid><doi>10.1039/c9ra08451g</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-2926-8065</orcidid><orcidid>https://orcid.org/0000-0002-0445-7847</orcidid><oa>free_for_read</oa></addata></record> |
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| source | DOAJ Directory of Open Access Journals; PubMed Central Open Access; EZB-FREE-00999 freely available EZB journals; PubMed Central |
| subjects | Chemistry Epitaxial growth Gallium arsenide Molecular beam epitaxy Molecular structure Nanowires Optical properties Optoelectronic devices Photoluminescence Quantum wells Room temperature Temperature dependence Ternary alloys |
| title | Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components |
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