Photo-enhanced gas sensing of SnS2 with nanoscale defects
Recently a SnS2 based NO2 gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. Concurrently, SnS2 grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the perfo...
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| Veröffentlicht in: | RSC advances 2019-01, Vol.9 (2), p.626-635 |
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| creator | Wen-Jie, Yan Deng-Yun, Chen Huei-Ru Fuh Ying-Lan, Li Zhang, Duan Liu, Huajun Wu, Gang Zhang, Lei Ren, Xiangkui Cho, Jiung Choi, Miri Byong Sun Chun Cormac Ó Coileáin Hong-Jun, Xu Wang, Zhi Jiang, Zhaotan Ching-Ray, Chang Han-Chun, Wu |
| description | Recently a SnS2 based NO2 gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. Concurrently, SnS2 grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO2 gas sensor based on SnS2 with nanoscale defects by photon illumination, and a detection limit of 2.5 ppb is achieved at room temperature. Using a classical Langmuir model and density functional theory simulations, we show S vacancies work as additional adsorption sites with fast adsorption times, higher adsorption energies, and an order of magnitude higher resistance change compared with pristine SnS2. More interestingly, when electron–hole pairs are excited by photon illumination, the average adsorption time first increases and then decreases with NO2 concentration, while the average desorption time always decreases with NO2 concentration. Our results give a deep understanding of photo-enhanced gas sensing of SnS2 with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials. |
| doi_str_mv | 10.1039/c8ra08857h |
| format | Article |
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Concurrently, SnS2 grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO2 gas sensor based on SnS2 with nanoscale defects by photon illumination, and a detection limit of 2.5 ppb is achieved at room temperature. Using a classical Langmuir model and density functional theory simulations, we show S vacancies work as additional adsorption sites with fast adsorption times, higher adsorption energies, and an order of magnitude higher resistance change compared with pristine SnS2. More interestingly, when electron–hole pairs are excited by photon illumination, the average adsorption time first increases and then decreases with NO2 concentration, while the average desorption time always decreases with NO2 concentration. Our results give a deep understanding of photo-enhanced gas sensing of SnS2 with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials.</description><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/c8ra08857h</identifier><identifier>PMID: 35517585</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Adsorption ; Chemical vapor deposition ; Chemistry ; Computer simulation ; Defects ; Density functional theory ; Design defects ; Detection ; Gas sensors ; Illumination ; Nitrogen dioxide ; Organic chemistry ; Tin disulfide</subject><ispartof>RSC advances, 2019-01, Vol.9 (2), p.626-635</ispartof><rights>Copyright Royal Society of Chemistry 2019</rights><rights>This journal is © The Royal Society of Chemistry 2019 The Royal Society of Chemistry</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059496/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9059496/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,723,776,780,860,881,27901,27902,53766,53768</link.rule.ids></links><search><creatorcontrib>Wen-Jie, Yan</creatorcontrib><creatorcontrib>Deng-Yun, Chen</creatorcontrib><creatorcontrib>Huei-Ru Fuh</creatorcontrib><creatorcontrib>Ying-Lan, Li</creatorcontrib><creatorcontrib>Zhang, Duan</creatorcontrib><creatorcontrib>Liu, Huajun</creatorcontrib><creatorcontrib>Wu, Gang</creatorcontrib><creatorcontrib>Zhang, Lei</creatorcontrib><creatorcontrib>Ren, Xiangkui</creatorcontrib><creatorcontrib>Cho, Jiung</creatorcontrib><creatorcontrib>Choi, Miri</creatorcontrib><creatorcontrib>Byong Sun Chun</creatorcontrib><creatorcontrib>Cormac Ó Coileáin</creatorcontrib><creatorcontrib>Hong-Jun, Xu</creatorcontrib><creatorcontrib>Wang, Zhi</creatorcontrib><creatorcontrib>Jiang, Zhaotan</creatorcontrib><creatorcontrib>Ching-Ray, Chang</creatorcontrib><creatorcontrib>Han-Chun, Wu</creatorcontrib><title>Photo-enhanced gas sensing of SnS2 with nanoscale defects</title><title>RSC advances</title><description>Recently a SnS2 based NO2 gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. 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Our results give a deep understanding of photo-enhanced gas sensing of SnS2 with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials.</description><subject>Adsorption</subject><subject>Chemical vapor deposition</subject><subject>Chemistry</subject><subject>Computer simulation</subject><subject>Defects</subject><subject>Density functional theory</subject><subject>Design defects</subject><subject>Detection</subject><subject>Gas sensors</subject><subject>Illumination</subject><subject>Nitrogen dioxide</subject><subject>Organic chemistry</subject><subject>Tin disulfide</subject><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNpdj0tLw0AYRQdBbKnd-AsCbtxE55FvHhtBii8QFKrrYTKPJiWdqZlE8d8bsRu9m7u4hwMXoTOCLwlm6srK3mApQTRHaE5xxUuKuZqhZc5bPIUDoZycoBkDIAIkzJF6adKQSh8bE613xcbkIvuY27gpUijWcU2Lz3ZoimhiytZ0vnA-eDvkU3QcTJf98tAL9HZ3-7p6KJ-e7x9XN0_lnjIxlBQqUTllXQAOzEuoKQ_WmIqIUJNQgbAqyAAVVl4oUNi5IAV2wKh1NVi2QNe_3v1Y77yzPg696fS-b3em_9LJtPrvEttGb9KHVhhUpfgkuDgI-vQ--jzoXZut7zoTfRqzppwTLKTkakLP_6HbNPZxuqcp-cGw4Jh9A2DTbWM</recordid><startdate>20190102</startdate><enddate>20190102</enddate><creator>Wen-Jie, Yan</creator><creator>Deng-Yun, Chen</creator><creator>Huei-Ru Fuh</creator><creator>Ying-Lan, Li</creator><creator>Zhang, Duan</creator><creator>Liu, Huajun</creator><creator>Wu, Gang</creator><creator>Zhang, Lei</creator><creator>Ren, Xiangkui</creator><creator>Cho, Jiung</creator><creator>Choi, Miri</creator><creator>Byong Sun Chun</creator><creator>Cormac Ó Coileáin</creator><creator>Hong-Jun, Xu</creator><creator>Wang, Zhi</creator><creator>Jiang, Zhaotan</creator><creator>Ching-Ray, Chang</creator><creator>Han-Chun, Wu</creator><general>Royal Society of Chemistry</general><general>The Royal Society of Chemistry</general><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20190102</creationdate><title>Photo-enhanced gas sensing of SnS2 with nanoscale defects</title><author>Wen-Jie, Yan ; 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Concurrently, SnS2 grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO2 gas sensor based on SnS2 with nanoscale defects by photon illumination, and a detection limit of 2.5 ppb is achieved at room temperature. Using a classical Langmuir model and density functional theory simulations, we show S vacancies work as additional adsorption sites with fast adsorption times, higher adsorption energies, and an order of magnitude higher resistance change compared with pristine SnS2. More interestingly, when electron–hole pairs are excited by photon illumination, the average adsorption time first increases and then decreases with NO2 concentration, while the average desorption time always decreases with NO2 concentration. Our results give a deep understanding of photo-enhanced gas sensing of SnS2 with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><pmid>35517585</pmid><doi>10.1039/c8ra08857h</doi><tpages>10</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Adsorption Chemical vapor deposition Chemistry Computer simulation Defects Density functional theory Design defects Detection Gas sensors Illumination Nitrogen dioxide Organic chemistry Tin disulfide |
| title | Photo-enhanced gas sensing of SnS2 with nanoscale defects |
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