Formation of buried superconducting Mo2N by nitrogen-ion-implantation
Nitrogen ion implantation is a useful technique to put nitrogen ions into lattices. In this work, nitrogen ion implantation into epitaxial Mo films is performed to create a buried superconducting γ-Mo2N. Atomically flat epitaxial (110) Mo films are grown on (0001) Al2O3. By impinging nitrogen ions,...
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Veröffentlicht in: | RSC advances 2020-12, Vol.10 (72), p.44339-44343 |
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creator | Lee, Joonhyuk Park, Jun Kue Joon Woo Lee Heo, Yunseok Oh, Yoon Seok Lee, Jae S Cho, Jinhyung Hyoungjeen Jeen |
description | Nitrogen ion implantation is a useful technique to put nitrogen ions into lattices. In this work, nitrogen ion implantation into epitaxial Mo films is performed to create a buried superconducting γ-Mo2N. Atomically flat epitaxial (110) Mo films are grown on (0001) Al2O3. By impinging nitrogen ions, where the beam energy is fixed to 20 keV, we observe (111) γ-Mo2N diffraction and the formation of a γ-Mo2N layer from X-ray reflectivity. Magnetization and transport measurements clearly support a superconducting layer in the implanted film. Our strategy shows that formation of a buried superconducting layer can be achieved through ion implantation and self-annealing. |
doi_str_mv | 10.1039/d0ra08533b |
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In this work, nitrogen ion implantation into epitaxial Mo films is performed to create a buried superconducting γ-Mo2N. Atomically flat epitaxial (110) Mo films are grown on (0001) Al2O3. By impinging nitrogen ions, where the beam energy is fixed to 20 keV, we observe (111) γ-Mo2N diffraction and the formation of a γ-Mo2N layer from X-ray reflectivity. Magnetization and transport measurements clearly support a superconducting layer in the implanted film. 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In this work, nitrogen ion implantation into epitaxial Mo films is performed to create a buried superconducting γ-Mo2N. Atomically flat epitaxial (110) Mo films are grown on (0001) Al2O3. By impinging nitrogen ions, where the beam energy is fixed to 20 keV, we observe (111) γ-Mo2N diffraction and the formation of a γ-Mo2N layer from X-ray reflectivity. Magnetization and transport measurements clearly support a superconducting layer in the implanted film. Our strategy shows that formation of a buried superconducting layer can be achieved through ion implantation and self-annealing.</description><subject>Aluminum oxide</subject><subject>Chemistry</subject><subject>Epitaxial growth</subject><subject>Ion implantation</subject><subject>Lattices</subject><subject>Nitrogen</subject><subject>Nitrogen ions</subject><subject>Superconductivity</subject><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNpdjz1PwzAURS0kRKvShV8QiYUl4K9nJwsSqtqCVGCB2bJjp7hK7OAkSP33RNAF7vKGe96RLkJXBN8SzMo7i5PGBTBmztCcYi5yikU5Q8u-P-ApAggV5ALNGACRhOE5Wm9iavXgY8hinZkxeWezfuxcqmKwYzX4sM-eI33JzDELfkhx70I-4blvu0aH4ef3Ep3Xuund8nQX6H2zfls95rvX7dPqYZd3DMshF1hSSigvSzAODKmhIiAkY2VpDeGFE2AFB2or4DU3WIKEQsvCWuEELgxboPtfbzea1tnKhSHpRnXJtzodVdRe_W2C_1D7-KVKDAXnYhLcnAQpfo6uH1Tr-8o10xIXx15RIQiWEw0Tev0PPcQxhWmeolziQjJKCPsGQF5xRg</recordid><startdate>20201216</startdate><enddate>20201216</enddate><creator>Lee, Joonhyuk</creator><creator>Park, Jun Kue</creator><creator>Joon Woo Lee</creator><creator>Heo, Yunseok</creator><creator>Oh, Yoon Seok</creator><creator>Lee, Jae S</creator><creator>Cho, Jinhyung</creator><creator>Hyoungjeen Jeen</creator><general>Royal Society of Chemistry</general><general>The Royal Society of Chemistry</general><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20201216</creationdate><title>Formation of buried superconducting Mo2N by nitrogen-ion-implantation</title><author>Lee, Joonhyuk ; Park, Jun Kue ; Joon Woo Lee ; Heo, Yunseok ; Oh, Yoon Seok ; Lee, Jae S ; Cho, Jinhyung ; Hyoungjeen Jeen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p307t-60722124995be5b1f5c15673399db148e65d6452dc54f4b075758a78dd6e608b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aluminum oxide</topic><topic>Chemistry</topic><topic>Epitaxial growth</topic><topic>Ion implantation</topic><topic>Lattices</topic><topic>Nitrogen</topic><topic>Nitrogen ions</topic><topic>Superconductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Joonhyuk</creatorcontrib><creatorcontrib>Park, Jun Kue</creatorcontrib><creatorcontrib>Joon Woo Lee</creatorcontrib><creatorcontrib>Heo, Yunseok</creatorcontrib><creatorcontrib>Oh, Yoon Seok</creatorcontrib><creatorcontrib>Lee, Jae S</creatorcontrib><creatorcontrib>Cho, Jinhyung</creatorcontrib><creatorcontrib>Hyoungjeen Jeen</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Joonhyuk</au><au>Park, Jun Kue</au><au>Joon Woo Lee</au><au>Heo, Yunseok</au><au>Oh, Yoon Seok</au><au>Lee, Jae S</au><au>Cho, Jinhyung</au><au>Hyoungjeen Jeen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation of buried superconducting Mo2N by nitrogen-ion-implantation</atitle><jtitle>RSC advances</jtitle><date>2020-12-16</date><risdate>2020</risdate><volume>10</volume><issue>72</issue><spage>44339</spage><epage>44343</epage><pages>44339-44343</pages><eissn>2046-2069</eissn><abstract>Nitrogen ion implantation is a useful technique to put nitrogen ions into lattices. In this work, nitrogen ion implantation into epitaxial Mo films is performed to create a buried superconducting γ-Mo2N. Atomically flat epitaxial (110) Mo films are grown on (0001) Al2O3. By impinging nitrogen ions, where the beam energy is fixed to 20 keV, we observe (111) γ-Mo2N diffraction and the formation of a γ-Mo2N layer from X-ray reflectivity. Magnetization and transport measurements clearly support a superconducting layer in the implanted film. Our strategy shows that formation of a buried superconducting layer can be achieved through ion implantation and self-annealing.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><pmid>35517130</pmid><doi>10.1039/d0ra08533b</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Aluminum oxide Chemistry Epitaxial growth Ion implantation Lattices Nitrogen Nitrogen ions Superconductivity |
title | Formation of buried superconducting Mo2N by nitrogen-ion-implantation |
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