n-Type conducting P doped ZnO thin films via chemical vapor deposition
Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substrates aerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in...
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| Veröffentlicht in: | RSC advances 2020-09, Vol.10 (57), p.34527-34533 |
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| container_title | RSC advances |
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| creator | Zhao, Donglei Li, Jianwei Sathasivam, Sanjayan Carmalt, Claire J |
| description | Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substrates
aerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10
Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase. Fitting of the diffraction data to a Le Bail model also showed a general expansion of the ZnO unit cell upon doping due to the substitution of Zn
ions with the larger P
. |
| doi_str_mv | 10.1039/d0ra05667g |
| format | Article |
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aerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10
Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase. Fitting of the diffraction data to a Le Bail model also showed a general expansion of the ZnO unit cell upon doping due to the substitution of Zn
ions with the larger P
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aerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10
Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase. Fitting of the diffraction data to a Le Bail model also showed a general expansion of the ZnO unit cell upon doping due to the substitution of Zn
ions with the larger P
.</description><subject>Chemical vapor deposition</subject><subject>Chemistry</subject><subject>Electrical resistivity</subject><subject>Glass substrates</subject><subject>Light transmittance</subject><subject>Oxidation</subject><subject>Thin films</subject><subject>Unit cell</subject><subject>Valence</subject><subject>Wurtzite</subject><subject>Zinc oxide</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNpdkU1LxDAQhoMoKurFHyABLyJU89HMthdB1k8QVkQvXkKapLuRNqlJu-C_t-oq6lxmYB5e3pkXoX1KTijh5akhUREBMJmvoW1GcsgYgXL917yF9lJ6IWOBoAzoJtriQtCcl2QbXfns8a2zWAdvBt07P8f32ITOGvzsZ7hfOI9r17QJL53CemFbp1WDl6oLERvbheR6F_wu2qhVk-zequ-gp6vLx-lNdje7vp2e32Wac-gzU4m6KkCLsq50VVSaEQ26KCYVs3wCinBKjZnQmgoBDISpFQFuqBW2BMGA76CzL91uqFprtPV9VI3somtVfJNBOfl3491CzsNSluOPCpaPAkcrgRheB5t62bqkbdMob8OQJAOgpBBFSUf08B_6Eobox_Mky3PBiSCsHKnjL0rHkFK09Y8ZSuRHQvKCPJx_JnQ9wge_7f-g33nwd5a6ixc</recordid><startdate>20200917</startdate><enddate>20200917</enddate><creator>Zhao, Donglei</creator><creator>Li, Jianwei</creator><creator>Sathasivam, Sanjayan</creator><creator>Carmalt, Claire J</creator><general>Royal Society of Chemistry</general><general>The Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-5206-9558</orcidid><orcidid>https://orcid.org/0000-0003-1788-6971</orcidid></search><sort><creationdate>20200917</creationdate><title>n-Type conducting P doped ZnO thin films via chemical vapor deposition</title><author>Zhao, Donglei ; Li, Jianwei ; Sathasivam, Sanjayan ; Carmalt, Claire J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-db5fb86c59fbcb8bc20c6c887b2e376a0311dd71f1556265dfa063d1e5e965263</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Chemical vapor deposition</topic><topic>Chemistry</topic><topic>Electrical resistivity</topic><topic>Glass substrates</topic><topic>Light transmittance</topic><topic>Oxidation</topic><topic>Thin films</topic><topic>Unit cell</topic><topic>Valence</topic><topic>Wurtzite</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Donglei</creatorcontrib><creatorcontrib>Li, Jianwei</creatorcontrib><creatorcontrib>Sathasivam, Sanjayan</creatorcontrib><creatorcontrib>Carmalt, Claire J</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, Donglei</au><au>Li, Jianwei</au><au>Sathasivam, Sanjayan</au><au>Carmalt, Claire J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>n-Type conducting P doped ZnO thin films via chemical vapor deposition</atitle><jtitle>RSC advances</jtitle><addtitle>RSC Adv</addtitle><date>2020-09-17</date><risdate>2020</risdate><volume>10</volume><issue>57</issue><spage>34527</spage><epage>34533</epage><pages>34527-34533</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>Extrinsically doped ZnO thin films are of interest due to their high electrical conductivity and transparency to visible light. In this study, P doped ZnO thin films were grown on glass substrates
aerosol assisted chemical vapour deposition. The results show that P is a successful dopant for ZnO in the V+ oxidation state and is able to reduce resistivity to 6.0 × 10
Ω cm while maintaining visible light transmittance at ∼75%. The thins films were characterized by X-ray diffraction studies that showed only Bragg peaks for the wurtzite ZnO phase. Fitting of the diffraction data to a Le Bail model also showed a general expansion of the ZnO unit cell upon doping due to the substitution of Zn
ions with the larger P
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| language | eng |
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| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; PubMed Central Open Access; PubMed Central |
| subjects | Chemical vapor deposition Chemistry Electrical resistivity Glass substrates Light transmittance Oxidation Thin films Unit cell Valence Wurtzite Zinc oxide |
| title | n-Type conducting P doped ZnO thin films via chemical vapor deposition |
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