Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films
In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO3 (BLSO) films can limit their intrinsic properties so that their role in the physical properties of BLSO films need to be...
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| Veröffentlicht in: | Materials 2022-03, Vol.15 (7), p.2417 |
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| description | In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO3 (BLSO) films can limit their intrinsic properties so that their role in the physical properties of BLSO films need to be properly understood. The electrical properties and electronic structure of BLSO films grown on SrTiO3 (001) (STO) and BaSnO3 (001) (BSO) substrates are comparatively studied to investigate the effect of the TDs. In the BLSO/STO films with TD density of ~1.32 × 1011 cm−2, n-type carrier density ne and electron mobility are significantly reduced, as compared with the BLSO/BSO films with nearly no TDs. This indicates that TDs play the role of scattering-centers as well as acceptor-centers to reduce n-type carriers. Moreover, in the BLSO/STO films, both binding energies of an Sn 3d core level and a valence band maximum are reduced, being qualitatively consistent with the Fermi level shift with the reduced n-type carriers. However, the reduced binding energies of the Sn 3d core level and the valence band maximum are clearly different as 0.39 and 0.19 eV, respectively, suggesting that the band gap renormalization preexisting in proportion to ne is further suppressed to restore the band gap in the BLSO/STO films with the TDs. |
| doi_str_mv | 10.3390/ma15072417 |
| format | Article |
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The electrical properties and electronic structure of BLSO films grown on SrTiO3 (001) (STO) and BaSnO3 (001) (BSO) substrates are comparatively studied to investigate the effect of the TDs. In the BLSO/STO films with TD density of ~1.32 × 1011 cm−2, n-type carrier density ne and electron mobility are significantly reduced, as compared with the BLSO/BSO films with nearly no TDs. This indicates that TDs play the role of scattering-centers as well as acceptor-centers to reduce n-type carriers. Moreover, in the BLSO/STO films, both binding energies of an Sn 3d core level and a valence band maximum are reduced, being qualitatively consistent with the Fermi level shift with the reduced n-type carriers. However, the reduced binding energies of the Sn 3d core level and the valence band maximum are clearly different as 0.39 and 0.19 eV, respectively, suggesting that the band gap renormalization preexisting in proportion to ne is further suppressed to restore the band gap in the BLSO/STO films with the TDs.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma15072417</identifier><identifier>PMID: 35407749</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Annealing ; Barium stannate ; Binding energy ; Carrier density ; Electrical properties ; Electron mobility ; Electronic structure ; Energy gap ; Lasers ; Physical properties ; Room temperature ; Single crystals ; Spectrum analysis ; Substrates ; Thin films ; Threading dislocations ; Valence band</subject><ispartof>Materials, 2022-03, Vol.15 (7), p.2417</ispartof><rights>2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>2022 by the authors. 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c449t-b63e5ad3d9ab18f03ac8f3889f10316412b9d96ef89061149d6ad60fb86306393</citedby><cites>FETCH-LOGICAL-c449t-b63e5ad3d9ab18f03ac8f3889f10316412b9d96ef89061149d6ad60fb86306393</cites><orcidid>0000-0003-2402-3111 ; 0000-0001-6680-6259 ; 0000-0002-8126-7975</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9000141/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9000141/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,723,776,780,881,27903,27904,53768,53770</link.rule.ids></links><search><creatorcontrib>Kang, Jeonghun</creatorcontrib><creatorcontrib>Lee, Jeong Hyuk</creatorcontrib><creatorcontrib>Lee, Han-Koo</creatorcontrib><creatorcontrib>Kim, Kwang-Tak</creatorcontrib><creatorcontrib>Kim, Jin Hyeok</creatorcontrib><creatorcontrib>Maeng, Min-Jae</creatorcontrib><creatorcontrib>Hong, Jong-Am</creatorcontrib><creatorcontrib>Park, Yongsup</creatorcontrib><creatorcontrib>Kim, Kee Hoon</creatorcontrib><title>Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films</title><title>Materials</title><description>In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO3 (BLSO) films can limit their intrinsic properties so that their role in the physical properties of BLSO films need to be properly understood. The electrical properties and electronic structure of BLSO films grown on SrTiO3 (001) (STO) and BaSnO3 (001) (BSO) substrates are comparatively studied to investigate the effect of the TDs. In the BLSO/STO films with TD density of ~1.32 × 1011 cm−2, n-type carrier density ne and electron mobility are significantly reduced, as compared with the BLSO/BSO films with nearly no TDs. This indicates that TDs play the role of scattering-centers as well as acceptor-centers to reduce n-type carriers. Moreover, in the BLSO/STO films, both binding energies of an Sn 3d core level and a valence band maximum are reduced, being qualitatively consistent with the Fermi level shift with the reduced n-type carriers. However, the reduced binding energies of the Sn 3d core level and the valence band maximum are clearly different as 0.39 and 0.19 eV, respectively, suggesting that the band gap renormalization preexisting in proportion to ne is further suppressed to restore the band gap in the BLSO/STO films with the TDs.</description><subject>Annealing</subject><subject>Barium stannate</subject><subject>Binding energy</subject><subject>Carrier density</subject><subject>Electrical properties</subject><subject>Electron mobility</subject><subject>Electronic structure</subject><subject>Energy gap</subject><subject>Lasers</subject><subject>Physical properties</subject><subject>Room temperature</subject><subject>Single crystals</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Threading dislocations</subject><subject>Valence band</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNpdkU1LAzEQhoMoKrUXf0HAiwirySabTS6CtvUDCj20XryEbDaxkd2kJruC_96til9zmYF55uWdGQCOMTonRKCLVuEClTnF5Q44xEKwDAtKd3_VB2Cc0jMaghDMc7EPDkhBUVlScQgeZ9Ya3cFg4Wodjaqdf4JTl5qgVeeCTzB42K0NnDUDFoN3Gi672Ouuj2Y7NVfZNGxMDa_V0i_IoOI8vHFNm47AnlVNMuOvPAIPN7PV5C6bL27vJ1fzTFMquqxixBSqJrVQFeYWEaW5JZwLixHBjOK8ErVgxnKBGMZU1EzVDNmKM4IYEWQELj91N33Vmlob30XVyE10rYpvMign_3a8W8un8CrFcBJM8SBw-iUQw0tvUidbl7RpGuVN6JPMGRUFLwueD-jJP_Q59NEP631QaGuXD9TZJ6VjSCka-20GI7n9mvz5GnkHB66G4Q</recordid><startdate>20220325</startdate><enddate>20220325</enddate><creator>Kang, Jeonghun</creator><creator>Lee, Jeong Hyuk</creator><creator>Lee, Han-Koo</creator><creator>Kim, Kwang-Tak</creator><creator>Kim, Jin Hyeok</creator><creator>Maeng, Min-Jae</creator><creator>Hong, Jong-Am</creator><creator>Park, Yongsup</creator><creator>Kim, Kee Hoon</creator><general>MDPI AG</general><general>MDPI</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0003-2402-3111</orcidid><orcidid>https://orcid.org/0000-0001-6680-6259</orcidid><orcidid>https://orcid.org/0000-0002-8126-7975</orcidid></search><sort><creationdate>20220325</creationdate><title>Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films</title><author>Kang, Jeonghun ; Lee, Jeong Hyuk ; Lee, Han-Koo ; Kim, Kwang-Tak ; Kim, Jin Hyeok ; Maeng, Min-Jae ; Hong, Jong-Am ; Park, Yongsup ; Kim, Kee Hoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c449t-b63e5ad3d9ab18f03ac8f3889f10316412b9d96ef89061149d6ad60fb86306393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Annealing</topic><topic>Barium stannate</topic><topic>Binding energy</topic><topic>Carrier density</topic><topic>Electrical properties</topic><topic>Electron mobility</topic><topic>Electronic structure</topic><topic>Energy gap</topic><topic>Lasers</topic><topic>Physical properties</topic><topic>Room temperature</topic><topic>Single crystals</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Threading dislocations</topic><topic>Valence band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kang, Jeonghun</creatorcontrib><creatorcontrib>Lee, Jeong Hyuk</creatorcontrib><creatorcontrib>Lee, Han-Koo</creatorcontrib><creatorcontrib>Kim, Kwang-Tak</creatorcontrib><creatorcontrib>Kim, Jin Hyeok</creatorcontrib><creatorcontrib>Maeng, Min-Jae</creatorcontrib><creatorcontrib>Hong, Jong-Am</creatorcontrib><creatorcontrib>Park, Yongsup</creatorcontrib><creatorcontrib>Kim, Kee Hoon</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kang, Jeonghun</au><au>Lee, Jeong Hyuk</au><au>Lee, Han-Koo</au><au>Kim, Kwang-Tak</au><au>Kim, Jin Hyeok</au><au>Maeng, Min-Jae</au><au>Hong, Jong-Am</au><au>Park, Yongsup</au><au>Kim, Kee Hoon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films</atitle><jtitle>Materials</jtitle><date>2022-03-25</date><risdate>2022</risdate><volume>15</volume><issue>7</issue><spage>2417</spage><pages>2417-</pages><issn>1996-1944</issn><eissn>1996-1944</eissn><abstract>In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO3 (BLSO) films can limit their intrinsic properties so that their role in the physical properties of BLSO films need to be properly understood. The electrical properties and electronic structure of BLSO films grown on SrTiO3 (001) (STO) and BaSnO3 (001) (BSO) substrates are comparatively studied to investigate the effect of the TDs. In the BLSO/STO films with TD density of ~1.32 × 1011 cm−2, n-type carrier density ne and electron mobility are significantly reduced, as compared with the BLSO/BSO films with nearly no TDs. This indicates that TDs play the role of scattering-centers as well as acceptor-centers to reduce n-type carriers. Moreover, in the BLSO/STO films, both binding energies of an Sn 3d core level and a valence band maximum are reduced, being qualitatively consistent with the Fermi level shift with the reduced n-type carriers. However, the reduced binding energies of the Sn 3d core level and the valence band maximum are clearly different as 0.39 and 0.19 eV, respectively, suggesting that the band gap renormalization preexisting in proportion to ne is further suppressed to restore the band gap in the BLSO/STO films with the TDs.</abstract><cop>Basel</cop><pub>MDPI AG</pub><pmid>35407749</pmid><doi>10.3390/ma15072417</doi><orcidid>https://orcid.org/0000-0003-2402-3111</orcidid><orcidid>https://orcid.org/0000-0001-6680-6259</orcidid><orcidid>https://orcid.org/0000-0002-8126-7975</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Annealing Barium stannate Binding energy Carrier density Electrical properties Electron mobility Electronic structure Energy gap Lasers Physical properties Room temperature Single crystals Spectrum analysis Substrates Thin films Threading dislocations Valence band |
| title | Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films |
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