Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

Implementation of vapor/phase dosing of small molecule inhibitors (SMIs) in advanced atomic layer deposition (ALD) cycles is currently being considered for bottom-up fabrication by area-selective ALD. When SMIs are used, it can be challenging to completely block precursor adsorption due to the inhib...

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Veröffentlicht in:	Journal of physical chemistry. C 2022-03, Vol.126 (10), p.4845-4853
Hauptverfasser:	Merkx, Marc J. M, Angelidis, Athanasios, Mameli, Alfredo, Li, Jun, Lemaire, Paul C, Sharma, Kashish, Hausmann, Dennis M, Kessels, Wilhelmus M. M, Sandoval, Tania E, Mackus, Adriaan J. M
Format:	Artikel
Sprache:	eng
Schlagworte:	C: Chemical and Catalytic Reactivity at Interfaces
Online-Zugang:	Volltext
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