Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator

The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO2/Si3N4 dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si3N4 single-layer insulator are conducted to the simulation works...

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Veröffentlicht in:	Materials 2022-01, Vol.15 (3), p.819
Hauptverfasser:	Min, So-Ra, Cho, Min-Su, Lee, Sang-Ho, Park, Jin, An, Hee-Dae, Kim, Geon-Uk, Yoon, Young-Jun, Seo, Jae-Hwa, Jang, Jae-Won, Bae, Jin-Hyuk, Lee, Sin-Hyung, Kang, In-Man
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition Conductivity Gallium nitrides Heat conductivity High temperature effects MOSFETs Silicon nitride Simulation Titanium dioxide Transconductance
Online-Zugang:	Volltext
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