Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation

A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm high-pressure, high-temperature (001) diamo...

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