Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field
The dielectric properties, tunability and figure-of-merit ( ) of relaxor Pb La (Zr Ti )O (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and are enhanced as the film thickness increases, which are mainly attributed...
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| Veröffentlicht in: | Materials 2021-10, Vol.14 (21), p.6448 |
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| creator | Nguyen, Minh D Tran, Doan T Dang, Ha T Nguyen, Chi T Q Rijnders, Guus Vu, Hung N |
| description | The dielectric properties, tunability and figure-of-merit (
) of relaxor Pb
La
(Zr
Ti
)O
(PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and
are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (-2%) in a wide-frequency range (10 kHz-1 MHz); meanwhile, the
value decreases significantly (-17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest
factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices. |
| doi_str_mv | 10.3390/ma14216448 |
| format | Article |
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) of relaxor Pb
La
(Zr
Ti
)O
(PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and
are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (-2%) in a wide-frequency range (10 kHz-1 MHz); meanwhile, the
value decreases significantly (-17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest
factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma14216448</identifier><identifier>PMID: 34771973</identifier><language>eng</language><publisher>Switzerland: MDPI AG</publisher><subject>Bias ; Dielectric loss ; Dielectric properties ; Electric fields ; Ferroelectricity ; Ferroelectrics ; Film thickness ; Frequency ranges ; Permittivity ; Phase transitions ; Relaxors ; Scanning electron microscopy</subject><ispartof>Materials, 2021-10, Vol.14 (21), p.6448</ispartof><rights>2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>2021 by the authors. 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-79e2b4b0719023e7c31fd80a995e5f2620048e93635d0c32fd98ab4d0fca91523</citedby><cites>FETCH-LOGICAL-c406t-79e2b4b0719023e7c31fd80a995e5f2620048e93635d0c32fd98ab4d0fca91523</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC8585368/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC8585368/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,27924,27925,53791,53793</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/34771973$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Nguyen, Minh D</creatorcontrib><creatorcontrib>Tran, Doan T</creatorcontrib><creatorcontrib>Dang, Ha T</creatorcontrib><creatorcontrib>Nguyen, Chi T Q</creatorcontrib><creatorcontrib>Rijnders, Guus</creatorcontrib><creatorcontrib>Vu, Hung N</creatorcontrib><title>Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field</title><title>Materials</title><addtitle>Materials (Basel)</addtitle><description>The dielectric properties, tunability and figure-of-merit (
) of relaxor Pb
La
(Zr
Ti
)O
(PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and
are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (-2%) in a wide-frequency range (10 kHz-1 MHz); meanwhile, the
value decreases significantly (-17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest
factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.</description><subject>Bias</subject><subject>Dielectric loss</subject><subject>Dielectric properties</subject><subject>Electric fields</subject><subject>Ferroelectricity</subject><subject>Ferroelectrics</subject><subject>Film thickness</subject><subject>Frequency ranges</subject><subject>Permittivity</subject><subject>Phase transitions</subject><subject>Relaxors</subject><subject>Scanning electron microscopy</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdkV9LHDEUxUOpqOi--AEk0JdSmJq_M5M-FER3W0EQZH0OmcyNxmYm22Sm6Ld3tmt3rfcll5xfDicchE4o-cq5ImedoYLRUoj6AzqkSpUFVUJ8fLMfoFnOj2QazmnN1D464KKqqKr4IRpuIZinmIoFpBQhgB2St3jhQ5exiwlf-u3lcuxNEwCfr1bBWzP42OdveO7cpOPo_j7Cywdvf_WQMzZ9u0GhxfOdMYT2GO05EzLMXs8jdLeYLy9-Ftc3P64uzq8LK0g5FJUC1oiGTFEJ41BZTl1bE6OUBOlYyQgRNShectkSy5lrVW0a0RJnjaKS8SP0feO7GpsOWgv9kEzQq-Q7k551NF7_r_T-Qd_HP7qWteRlPRl8fjVI8fcIedCdzxZCMD3EMWsmVSVUycka_fQOfYxj6qfvramSSFnJNfVlQ9kUc07gtmEo0es-9a7PCT59G3-L_muPvwCqmZsw</recordid><startdate>20211027</startdate><enddate>20211027</enddate><creator>Nguyen, Minh D</creator><creator>Tran, Doan T</creator><creator>Dang, Ha T</creator><creator>Nguyen, Chi T Q</creator><creator>Rijnders, Guus</creator><creator>Vu, Hung N</creator><general>MDPI AG</general><general>MDPI</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20211027</creationdate><title>Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field</title><author>Nguyen, Minh D ; 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) of relaxor Pb
La
(Zr
Ti
)O
(PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and
are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (-2%) in a wide-frequency range (10 kHz-1 MHz); meanwhile, the
value decreases significantly (-17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest
factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.</abstract><cop>Switzerland</cop><pub>MDPI AG</pub><pmid>34771973</pmid><doi>10.3390/ma14216448</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Bias Dielectric loss Dielectric properties Electric fields Ferroelectricity Ferroelectrics Film thickness Frequency ranges Permittivity Phase transitions Relaxors Scanning electron microscopy |
| title | Relaxor-Ferroelectric Films for Dielectric Tunable Applications: Effect of Film Thickness and Applied Electric Field |
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