Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure
Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders....
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| Veröffentlicht in: | Materials 2021-08, Vol.14 (16), p.4623 |
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| creator | Wang, Jiawei Chen, Aitian Li, Peisen Zhang, Sen |
| description | Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics. |
| doi_str_mv | 10.3390/ma14164623 |
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In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma14164623</identifier><identifier>PMID: 34443144</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Anisotropy ; Charge exchange ; Coupling (molecular) ; Data storage ; Electric fields ; Electrical junctions ; Energy efficiency ; Ferroelectric materials ; Ferroelectricity ; Ferroelectrics ; Ferromagnetism ; Heterostructures ; Influence ; Information storage ; Magnetic fields ; Magnetism ; Magnetoresistance ; Magnetoresistivity ; Multiferroic materials ; Piezoelectricity ; Random access memory ; Review ; Room temperature ; Spin valves ; Spintronics ; Tunnel junctions</subject><ispartof>Materials, 2021-08, Vol.14 (16), p.4623</ispartof><rights>2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). 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In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.</description><subject>Anisotropy</subject><subject>Charge exchange</subject><subject>Coupling (molecular)</subject><subject>Data storage</subject><subject>Electric fields</subject><subject>Electrical junctions</subject><subject>Energy efficiency</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Ferroelectrics</subject><subject>Ferromagnetism</subject><subject>Heterostructures</subject><subject>Influence</subject><subject>Information storage</subject><subject>Magnetic fields</subject><subject>Magnetism</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Multiferroic materials</subject><subject>Piezoelectricity</subject><subject>Random access memory</subject><subject>Review</subject><subject>Room temperature</subject><subject>Spin valves</subject><subject>Spintronics</subject><subject>Tunnel junctions</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdkU1LAzEQhoMoWtSLv6DgRYS1SSabTS6CFrVCxYuCt5CmU92yu6lJVui_d9eKVecyH3l4ZyZDyAmjFwCajmrLBJNCctghA6a1zJgWYvdXfECOY1zSzgCY4nqfHIAQApgQA_LyYF8bTB4rdCmUbviAtQ_r4bWNOB_6ZniLIfj6Cyrd6Cvbsm2VykVf6pIJJgw-ptC61AY8InsLW0U8_vaH5Pn25mk8yaaPd_fjq2nmQEHK5pZhwR2HmS1mlhcohLJ5LmShwGq1QI52xjVVbq5zBGe5BSqVcsohFRrgkFxudFftrMa5wyYFW5lVKGsb1sbb0vx9aco38-o_jBKUUZCdwNm3QPDvLcZk6jI6rCrboG-j4bmUlMuC971O_6FL34amW6-ncig0K3rqfEO57jtiwMXPMIya_mZmezP4BKAziWw</recordid><startdate>20210817</startdate><enddate>20210817</enddate><creator>Wang, Jiawei</creator><creator>Chen, Aitian</creator><creator>Li, Peisen</creator><creator>Zhang, Sen</creator><general>MDPI AG</general><general>MDPI</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-1751-0731</orcidid><orcidid>https://orcid.org/0000-0001-7116-6479</orcidid><orcidid>https://orcid.org/0000-0003-3535-9470</orcidid></search><sort><creationdate>20210817</creationdate><title>Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure</title><author>Wang, Jiawei ; Chen, Aitian ; Li, Peisen ; Zhang, Sen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-da1e72c23ba7ba27e448a5546783a98fe2eab2908cd95e3ca2a30688c8ce04933</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Anisotropy</topic><topic>Charge exchange</topic><topic>Coupling (molecular)</topic><topic>Data storage</topic><topic>Electric fields</topic><topic>Electrical junctions</topic><topic>Energy efficiency</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Ferroelectrics</topic><topic>Ferromagnetism</topic><topic>Heterostructures</topic><topic>Influence</topic><topic>Information storage</topic><topic>Magnetic fields</topic><topic>Magnetism</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Multiferroic materials</topic><topic>Piezoelectricity</topic><topic>Random access memory</topic><topic>Review</topic><topic>Room temperature</topic><topic>Spin valves</topic><topic>Spintronics</topic><topic>Tunnel junctions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Jiawei</creatorcontrib><creatorcontrib>Chen, Aitian</creatorcontrib><creatorcontrib>Li, Peisen</creatorcontrib><creatorcontrib>Zhang, Sen</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Jiawei</au><au>Chen, Aitian</au><au>Li, Peisen</au><au>Zhang, Sen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure</atitle><jtitle>Materials</jtitle><date>2021-08-17</date><risdate>2021</risdate><volume>14</volume><issue>16</issue><spage>4623</spage><pages>4623-</pages><issn>1996-1944</issn><eissn>1996-1944</eissn><abstract>Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and coupling of ferroelectric (FE) and magnetic orders. However, the scarcity of single-phase multiferroics at room temperature spurs zealous research in pursuit of composite systems combining a ferromagnet with FE or piezoelectric materials. So far, electric-field control of magnetism has been achieved in the exchange-mediated, charge-mediated, and strain-mediated ferromagnetic (FM)/FE multiferroic heterostructures. Concerning the giant, nonvolatile, and reversible electric-field control of magnetism at room temperature, we first review the theoretical and representative experiments on the electric-field control of magnetism via strain coupling in the FM/FE multiferroic heterostructures, especially the CoFeB/PMN–PT [where PMN–PT denotes the (PbMn1/3Nb2/3O3)1−x-(PbTiO3)x] heterostructure. Then, the application in the prototype spintronic devices, i.e., spin valves and magnetic tunnel junctions, is introduced. The nonvolatile and reversible electric-field control of tunneling magnetoresistance without assistant magnetic field in the magnetic tunnel junction (MTJ)/FE architecture shows great promise for the future of data storage technology. We close by providing the main challenges of this and the different perspectives for straintronics and spintronics.</abstract><cop>Basel</cop><pub>MDPI AG</pub><pmid>34443144</pmid><doi>10.3390/ma14164623</doi><orcidid>https://orcid.org/0000-0002-1751-0731</orcidid><orcidid>https://orcid.org/0000-0001-7116-6479</orcidid><orcidid>https://orcid.org/0000-0003-3535-9470</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Anisotropy Charge exchange Coupling (molecular) Data storage Electric fields Electrical junctions Energy efficiency Ferroelectric materials Ferroelectricity Ferroelectrics Ferromagnetism Heterostructures Influence Information storage Magnetic fields Magnetism Magnetoresistance Magnetoresistivity Multiferroic materials Piezoelectricity Random access memory Review Room temperature Spin valves Spintronics Tunnel junctions |
| title | Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure |
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