Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface
This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obt...
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| Veröffentlicht in: | Materials 2021-07, Vol.14 (15), p.4189 |
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| creator | Lewandków, Rafał Mazur, Piotr Trembułowicz, Artur Sabik, Agata Wasielewski, Radosław Grodzicki, Miłosz |
| description | This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method. Graphite layers terminating the SiC(0001) surface were formed by thermal annealing in UHV. The physicochemical properties of the deposited MgO layers and the systems formed with their participation were determined using X-ray and UV photoelectron spectroscopy (XPS, UPS). The results confirmed the formation of MgO compounds. Energy level diagrams were constructed for both systems. The valence band maximum of MgO layers was embedded deeper on the graphitized surface than on the SiC(0001). |
| doi_str_mv | 10.3390/ma14154189 |
| format | Article |
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The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method. Graphite layers terminating the SiC(0001) surface were formed by thermal annealing in UHV. The physicochemical properties of the deposited MgO layers and the systems formed with their participation were determined using X-ray and UV photoelectron spectroscopy (XPS, UPS). The results confirmed the formation of MgO compounds. Energy level diagrams were constructed for both systems. The valence band maximum of MgO layers was embedded deeper on the graphitized surface than on the SiC(0001).</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma14154189</identifier><identifier>PMID: 34361382</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Annealing ; Carbon ; Electronic properties ; Energy ; Energy levels ; Experiments ; Graphene ; Graphite ; Graphitization ; Heat conductivity ; Magnesium oxide ; Molecular beam epitaxy ; MOSFETs ; Photoelectrons ; Semiconductors ; Silicon carbide ; Spectrum analysis ; Superconductors (materials) ; Transistors ; Ultrahigh vacuum ; Valence band ; X ray photoelectron spectroscopy</subject><ispartof>Materials, 2021-07, Vol.14 (15), p.4189</ispartof><rights>2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). 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The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method. Graphite layers terminating the SiC(0001) surface were formed by thermal annealing in UHV. The physicochemical properties of the deposited MgO layers and the systems formed with their participation were determined using X-ray and UV photoelectron spectroscopy (XPS, UPS). The results confirmed the formation of MgO compounds. Energy level diagrams were constructed for both systems. The valence band maximum of MgO layers was embedded deeper on the graphitized surface than on the SiC(0001).</description><subject>Annealing</subject><subject>Carbon</subject><subject>Electronic properties</subject><subject>Energy</subject><subject>Energy levels</subject><subject>Experiments</subject><subject>Graphene</subject><subject>Graphite</subject><subject>Graphitization</subject><subject>Heat conductivity</subject><subject>Magnesium oxide</subject><subject>Molecular beam epitaxy</subject><subject>MOSFETs</subject><subject>Photoelectrons</subject><subject>Semiconductors</subject><subject>Silicon carbide</subject><subject>Spectrum analysis</subject><subject>Superconductors (materials)</subject><subject>Transistors</subject><subject>Ultrahigh vacuum</subject><subject>Valence band</subject><subject>X ray photoelectron spectroscopy</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdkW1LwzAQgIMoTtQv_oKCX1SoNr20Tb4IMqYOJoovn0OaXLeONplJK_jv7djw7eC4g3t4uOMIOaHJJYBIrlpFGc0Y5WKHHFAh8pgKxnZ_9SNyHMIyGQKA8lTskxEwyCnw9IA8T23V9Gg1Rq6K7rxaLeoOo5n6RB85G00a1J13ttbRk3cr9F2NYY0-zB-v8vv4pR6fDWZ6Hk1th75SGo_IXqWagMfbekjebiev4_t49ng3Hd_MYg0cujjLSkOVYcbkGobklDNeAaaa8yIpjC5KRA5lphkCKgaJFkxRZKaqjKEMDsn1xrvqyxaNRtt51ciVr1vlP6VTtfw7sfVCzt2H5MAKnsIgONsKvHvvMXSyrYPGplEWXR9kmmWCgYAkH9DTf-jS9d4O560pzlmeZHygLjaU9i4Ej9X3MjSR62_Jn2_BFzidhIw</recordid><startdate>20210727</startdate><enddate>20210727</enddate><creator>Lewandków, Rafał</creator><creator>Mazur, Piotr</creator><creator>Trembułowicz, Artur</creator><creator>Sabik, Agata</creator><creator>Wasielewski, Radosław</creator><creator>Grodzicki, Miłosz</creator><general>MDPI AG</general><general>MDPI</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-6952-0384</orcidid><orcidid>https://orcid.org/0000-0001-9683-1084</orcidid><orcidid>https://orcid.org/0000-0002-2671-8008</orcidid></search><sort><creationdate>20210727</creationdate><title>Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface</title><author>Lewandków, Rafał ; 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| subjects | Annealing Carbon Electronic properties Energy Energy levels Experiments Graphene Graphite Graphitization Heat conductivity Magnesium oxide Molecular beam epitaxy MOSFETs Photoelectrons Semiconductors Silicon carbide Spectrum analysis Superconductors (materials) Transistors Ultrahigh vacuum Valence band X ray photoelectron spectroscopy |
| title | Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface |
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