Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of a...

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Veröffentlicht in:	Nanomaterials (Basel, Switzerland) Switzerland), 2020-12, Vol.11 (1), p.11, Article 11
Hauptverfasser:	Shamakhov, Viktor, Nikolaev, Dmitriy, Slipchenko, Sergey, Fomin, Evgenii, Smirnov, Alexander, Eliseyev, Ilya, Pikhtin, Nikita, Kop'ev, Peter
Format:	Artikel
Sprache:	eng
Schlagworte:	atomic force microscopy Chemistry Chemistry, Multidisciplinary Materials Science Materials Science, Multidisciplinary MOCVD Nanoscience & Nanotechnology photoluminescence Physical Sciences Physics Physics, Applied Science & Technology Science & Technology - Other Topics selective area epitaxy selective area growth semiconductors Technology
Online-Zugang:	Volltext
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