Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes
The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off cur...
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| Veröffentlicht in: | Materials 2020-09, Vol.13 (19), p.4335 |
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| creator | Kim, Dong-Hyeon Min, Seong-Ji Oh, Jong-Min Koo, Sang-Mo |
| description | The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off current ratio vs. non-annealed devices for measurement temperatures ranging from 300 K to 450 K. The ideality factor, derived from the current density–voltage (J-V) characterization, increased by a factor of ~2.2 after annealing, whereas the barrier height decreased from ~0.91 to ~0.68 eV. Additionally, Auger electron spectroscopy indicated decreased concentrations of atomic oxygen in the AlN thin film, from ~36% before, to ~24% after annealing. This may have contributed to the reduced barrier height and improved on/off ratio in the annealed AlN/SiC diodes. |
| doi_str_mv | 10.3390/ma13194335 |
| format | Article |
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The annealed SBD devices exhibited a 10x increase in the on/off current ratio vs. non-annealed devices for measurement temperatures ranging from 300 K to 450 K. The ideality factor, derived from the current density–voltage (J-V) characterization, increased by a factor of ~2.2 after annealing, whereas the barrier height decreased from ~0.91 to ~0.68 eV. Additionally, Auger electron spectroscopy indicated decreased concentrations of atomic oxygen in the AlN thin film, from ~36% before, to ~24% after annealing. This may have contributed to the reduced barrier height and improved on/off ratio in the annealed AlN/SiC diodes.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma13194335</identifier><identifier>PMID: 33003505</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Aluminum ; Aluminum nitride ; Annealing ; Atomic oxygen ; Diodes ; Heterojunctions ; High temperature ; Molecular beam epitaxy ; Organic chemicals ; Oxygenation ; Schottky diodes ; Silicon carbide ; Silicon substrates ; Sulfur ; Temperature effects ; Thin films ; Transistors</subject><ispartof>Materials, 2020-09, Vol.13 (19), p.4335</ispartof><rights>2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>2020 by the authors. 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-c60abd027e9bd1e3b67268ecebf44b3f4f2b8a15d5795743f2d592f54135a693</citedby><cites>FETCH-LOGICAL-c383t-c60abd027e9bd1e3b67268ecebf44b3f4f2b8a15d5795743f2d592f54135a693</cites><orcidid>0000-0001-6303-2876</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579660/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC7579660/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,727,780,784,885,27924,27925,53791,53793</link.rule.ids></links><search><creatorcontrib>Kim, Dong-Hyeon</creatorcontrib><creatorcontrib>Min, Seong-Ji</creatorcontrib><creatorcontrib>Oh, Jong-Min</creatorcontrib><creatorcontrib>Koo, Sang-Mo</creatorcontrib><title>Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes</title><title>Materials</title><description>The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off current ratio vs. non-annealed devices for measurement temperatures ranging from 300 K to 450 K. The ideality factor, derived from the current density–voltage (J-V) characterization, increased by a factor of ~2.2 after annealing, whereas the barrier height decreased from ~0.91 to ~0.68 eV. Additionally, Auger electron spectroscopy indicated decreased concentrations of atomic oxygen in the AlN thin film, from ~36% before, to ~24% after annealing. This may have contributed to the reduced barrier height and improved on/off ratio in the annealed AlN/SiC diodes.</description><subject>Aluminum</subject><subject>Aluminum nitride</subject><subject>Annealing</subject><subject>Atomic oxygen</subject><subject>Diodes</subject><subject>Heterojunctions</subject><subject>High temperature</subject><subject>Molecular beam epitaxy</subject><subject>Organic chemicals</subject><subject>Oxygenation</subject><subject>Schottky diodes</subject><subject>Silicon carbide</subject><subject>Silicon substrates</subject><subject>Sulfur</subject><subject>Temperature effects</subject><subject>Thin films</subject><subject>Transistors</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpdkVtLwzAUx4MoTuZe_AQFX0SoJjlJ27wIMi8TxD2495CmqctoG01acX56oxvezsu5_fhzLggdEXwGIPB5qwgQwQD4DjogQmRpzNjur3iEJiGscDQAUlCxj0YAMeGYH6D5jSq91aq3rktUVyXTpfJK98bb903R1cn8bf1kOtWbKrlsHs7ZLH2002RmIuVWQ6e_uCvrKhMO0V6tmmAmWz9Gi5vrxXSW3s9v76aX96mGAvpUZ1iVFaa5EWVFDJRZTrPCaFPWjJVQs5qWhSK84rngOYOaVlzQmjMCXGUCxuhiI_s8lK2ptOl6rxr57G2r_Fo6ZeXfTmeX8sm9yjwKZhmOAidbAe9eBhN62dqgTdOozrghSMpYwTAH-oke_0NXbvBd3E5Szooi3lKQSJ1uKO1dCN7U38MQLD8_JX8-BR9W5oPV</recordid><startdate>20200929</startdate><enddate>20200929</enddate><creator>Kim, Dong-Hyeon</creator><creator>Min, Seong-Ji</creator><creator>Oh, Jong-Min</creator><creator>Koo, Sang-Mo</creator><general>MDPI AG</general><general>MDPI</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0001-6303-2876</orcidid></search><sort><creationdate>20200929</creationdate><title>Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes</title><author>Kim, Dong-Hyeon ; Min, Seong-Ji ; Oh, Jong-Min ; Koo, Sang-Mo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-c60abd027e9bd1e3b67268ecebf44b3f4f2b8a15d5795743f2d592f54135a693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aluminum</topic><topic>Aluminum nitride</topic><topic>Annealing</topic><topic>Atomic oxygen</topic><topic>Diodes</topic><topic>Heterojunctions</topic><topic>High temperature</topic><topic>Molecular beam epitaxy</topic><topic>Organic chemicals</topic><topic>Oxygenation</topic><topic>Schottky diodes</topic><topic>Silicon carbide</topic><topic>Silicon substrates</topic><topic>Sulfur</topic><topic>Temperature effects</topic><topic>Thin films</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Dong-Hyeon</creatorcontrib><creatorcontrib>Min, Seong-Ji</creatorcontrib><creatorcontrib>Oh, Jong-Min</creatorcontrib><creatorcontrib>Koo, Sang-Mo</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Access via ProQuest (Open Access)</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Dong-Hyeon</au><au>Min, Seong-Ji</au><au>Oh, Jong-Min</au><au>Koo, Sang-Mo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes</atitle><jtitle>Materials</jtitle><date>2020-09-29</date><risdate>2020</risdate><volume>13</volume><issue>19</issue><spage>4335</spage><pages>4335-</pages><issn>1996-1944</issn><eissn>1996-1944</eissn><abstract>The effects of rapid thermal annealing (RTA) on Schottky barrier diodes (SBDs) made from oxygenated aluminum nitride (AlN) thin films deposited on a silicon carbide (SiC) substrate using radio frequency sputtering were investigated. The annealed SBD devices exhibited a 10x increase in the on/off current ratio vs. non-annealed devices for measurement temperatures ranging from 300 K to 450 K. The ideality factor, derived from the current density–voltage (J-V) characterization, increased by a factor of ~2.2 after annealing, whereas the barrier height decreased from ~0.91 to ~0.68 eV. Additionally, Auger electron spectroscopy indicated decreased concentrations of atomic oxygen in the AlN thin film, from ~36% before, to ~24% after annealing. This may have contributed to the reduced barrier height and improved on/off ratio in the annealed AlN/SiC diodes.</abstract><cop>Basel</cop><pub>MDPI AG</pub><pmid>33003505</pmid><doi>10.3390/ma13194335</doi><orcidid>https://orcid.org/0000-0001-6303-2876</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum Aluminum nitride Annealing Atomic oxygen Diodes Heterojunctions High temperature Molecular beam epitaxy Organic chemicals Oxygenation Schottky diodes Silicon carbide Silicon substrates Sulfur Temperature effects Thin films Transistors |
| title | Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes |
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