Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were f...

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Veröffentlicht in:	Materials 2020-09, Vol.13 (18), p.4140
Hauptverfasser:	Dub, Maksym, Sai, Pavlo, Przewłoka, Aleksandra, Krajewska, Aleksandra, Sakowicz, Maciej, Prystawko, Paweł, Kacperski, Jacek, Pasternak, Iwona, Cywiński, Grzegorz, But, Dmytro, Knap, Wojciech, Rumyantsev, Sergey
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics
Online-Zugang:	Volltext
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