Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications
[Display omitted] •Novel high-performance p-CuO@CuS/n-Si photodetectors have been facilely fabricated.•Structural and vibrational studied confirm the synthesis of fabrication of CuO@CuS nanocomposite system.•Core-shell structure like morphology was approved by FESEM & HRTEM analyses.•High Ps of...
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| Veröffentlicht in: | Sensors and actuators. A. Physical. 2021-01, Vol.317, p.112373-112373, Article 112373 |
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| creator | Gunasekaran, S. Thangaraju, D. Marnadu, R. Chandrasekaran, J. Shkir, Mohd Durairajan, A. Valente, M.A. Alshaharani, T. Elango, M. |
| description | [Display omitted]
•Novel high-performance p-CuO@CuS/n-Si photodetectors have been facilely fabricated.•Structural and vibrational studied confirm the synthesis of fabrication of CuO@CuS nanocomposite system.•Core-shell structure like morphology was approved by FESEM & HRTEM analyses.•High Ps of ∼ 7.76 104 % & R ∼ 798.61mA/W was observed for the fabricated photodetector.•High detectivity (D*) of 8.19 ×1011 J & of ∼ 309.66%, was observed for the fabricated photodetector.
Development of photo detectors based on different semiconducting materials with high performance has been in progress in recent past, however, there is a lot of difficulties in developing the more effective photo detectors-based devices with high responsivity, detectivity and quantum efficiency. Hence, we have synthesized pure CuS and CuO@CuS core-shell heterostructure based photo detectors with high performance by simple and cost-effective two-step chemical co-precipitation method. The phase purity of CuS and CuO@CuS composite was observed by XRD analysis and the result were verified with Raman spectroscopy studies. Sphere like morphology of pure CuS and core-shell structure formation of CuO@CuS are observed with scanning and transmission electron microscopes. The presence of expected elements has been confirmed with EDX elemental mapping. Light harvesting photodiodes were fabricated by using n-type silicon substrate through drop cost method. Photo sensitive parameters of fabricated diodes were analyzed by I–V characteristics. The p-CuO@CuS (1:1)/n-Si diode owned a maximum photosensitivity (Ps) ∼ 7.76 × 104 %, photoresponsivity (R) ∼ 798.61 mA/W, external quantum efficiency (EQE)∼309.66 % and specific detectivity (D*) ∼ 8.19 × 1011 Jones when compared to p-CuS/n-Si diode. The obtained results revealed that the core/shell heterostructure of CuO@CuS is the most appropriate for photo detection. |
| doi_str_mv | 10.1016/j.sna.2020.112373 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_7556296</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0924424720316897</els_id><sourcerecordid>2492706603</sourcerecordid><originalsourceid>FETCH-LOGICAL-c505t-10d9dd463fec6b7d941bc62eb11079d8fc2f44ac54076ea943cbe7b5edc056763</originalsourceid><addsrcrecordid>eNp9kU2LFDEQhoMo7jj6A7xIgxcvPZuvTiYIogx-wcIKq-eQTqqdDD1Jm6QH9uJvN82si3rwVJXkqbdS9SL0nOANwURcHjY5mA3FtJ4JZZI9QCuylaxlWKiHaIUV5S2nXF6gJzkfMMaMSfkYXTCGJeECr9DPL_tYYoaQffEnaIytwZfbJg7NYPrkrSngGhsTtHkP41jT4xQrDU0wIeaSZlvmVJmp3c3Xb3fzzWVob3zjfHTQDDE109LCQYGqHUNjpmlcZGuen6JHgxkzPLuLa_Ttw_uvu0_t1fXHz7t3V63tcFdagp1yjgs2gBW9dIqT3goKPSFYKrcdLB04N7bjWAowijPbg-w7cBZ3Qgq2Rm_OutPcH-sthJLMqKfkjybd6mi8_vsl-L3-Hk9adp2gahF4dSeQ4o8ZctFHn23dhwkQ56wp7yhW2y1TFX35D3qIcwp1vEopKrEQ1Yc1ImfKpphzguH-MwTrxV190NVdvbirz-7Wmhd_TnFf8dvOCrw-A1B3efKQdLYeggXnU92-dtH_R_4X5cm44Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2492706603</pqid></control><display><type>article</type><title>Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications</title><source>Elsevier ScienceDirect Journals</source><creator>Gunasekaran, S. ; Thangaraju, D. ; Marnadu, R. ; Chandrasekaran, J. ; Shkir, Mohd ; Durairajan, A. ; Valente, M.A. ; Alshaharani, T. ; Elango, M.</creator><creatorcontrib>Gunasekaran, S. ; Thangaraju, D. ; Marnadu, R. ; Chandrasekaran, J. ; Shkir, Mohd ; Durairajan, A. ; Valente, M.A. ; Alshaharani, T. ; Elango, M.</creatorcontrib><description>[Display omitted]
•Novel high-performance p-CuO@CuS/n-Si photodetectors have been facilely fabricated.•Structural and vibrational studied confirm the synthesis of fabrication of CuO@CuS nanocomposite system.•Core-shell structure like morphology was approved by FESEM & HRTEM analyses.•High Ps of ∼ 7.76 104 % & R ∼ 798.61mA/W was observed for the fabricated photodetector.•High detectivity (D*) of 8.19 ×1011 J & of ∼ 309.66%, was observed for the fabricated photodetector.
Development of photo detectors based on different semiconducting materials with high performance has been in progress in recent past, however, there is a lot of difficulties in developing the more effective photo detectors-based devices with high responsivity, detectivity and quantum efficiency. Hence, we have synthesized pure CuS and CuO@CuS core-shell heterostructure based photo detectors with high performance by simple and cost-effective two-step chemical co-precipitation method. The phase purity of CuS and CuO@CuS composite was observed by XRD analysis and the result were verified with Raman spectroscopy studies. Sphere like morphology of pure CuS and core-shell structure formation of CuO@CuS are observed with scanning and transmission electron microscopes. The presence of expected elements has been confirmed with EDX elemental mapping. Light harvesting photodiodes were fabricated by using n-type silicon substrate through drop cost method. Photo sensitive parameters of fabricated diodes were analyzed by I–V characteristics. The p-CuO@CuS (1:1)/n-Si diode owned a maximum photosensitivity (Ps) ∼ 7.76 × 104 %, photoresponsivity (R) ∼ 798.61 mA/W, external quantum efficiency (EQE)∼309.66 % and specific detectivity (D*) ∼ 8.19 × 1011 Jones when compared to p-CuS/n-Si diode. The obtained results revealed that the core/shell heterostructure of CuO@CuS is the most appropriate for photo detection.</description><identifier>ISSN: 0924-4247</identifier><identifier>EISSN: 1873-3069</identifier><identifier>EISSN: 0924-4247</identifier><identifier>DOI: 10.1016/j.sna.2020.112373</identifier><identifier>PMID: 33071460</identifier><language>eng</language><publisher>Switzerland: Elsevier B.V</publisher><subject>Chemical precipitation ; Copper sulfides ; Core-shell structure ; Core/shell heterostructure ; Cost analysis ; Current voltage characteristics ; CuS@CuO ; Detectors ; Heterostructures ; Microscopes ; Morphology ; Parameter sensitivity ; Photodetector ; Photodiodes ; Photoresponse ; Photosensitivity ; Quantum efficiency ; Raman spectroscopy ; Semiconductors ; Sensors ; Silicon substrates ; Studies ; Transmission electron microscopy</subject><ispartof>Sensors and actuators. A. Physical., 2021-01, Vol.317, p.112373-112373, Article 112373</ispartof><rights>2020 Elsevier B.V.</rights><rights>2020 Elsevier B.V. All rights reserved.</rights><rights>Copyright Elsevier BV Jan 1, 2021</rights><rights>2020 Elsevier B.V. All rights reserved. 2020 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c505t-10d9dd463fec6b7d941bc62eb11079d8fc2f44ac54076ea943cbe7b5edc056763</citedby><cites>FETCH-LOGICAL-c505t-10d9dd463fec6b7d941bc62eb11079d8fc2f44ac54076ea943cbe7b5edc056763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0924424720316897$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>230,314,776,780,881,3537,27901,27902,65534</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/33071460$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Gunasekaran, S.</creatorcontrib><creatorcontrib>Thangaraju, D.</creatorcontrib><creatorcontrib>Marnadu, R.</creatorcontrib><creatorcontrib>Chandrasekaran, J.</creatorcontrib><creatorcontrib>Shkir, Mohd</creatorcontrib><creatorcontrib>Durairajan, A.</creatorcontrib><creatorcontrib>Valente, M.A.</creatorcontrib><creatorcontrib>Alshaharani, T.</creatorcontrib><creatorcontrib>Elango, M.</creatorcontrib><title>Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications</title><title>Sensors and actuators. A. Physical.</title><addtitle>Sens Actuators A Phys</addtitle><description>[Display omitted]
•Novel high-performance p-CuO@CuS/n-Si photodetectors have been facilely fabricated.•Structural and vibrational studied confirm the synthesis of fabrication of CuO@CuS nanocomposite system.•Core-shell structure like morphology was approved by FESEM & HRTEM analyses.•High Ps of ∼ 7.76 104 % & R ∼ 798.61mA/W was observed for the fabricated photodetector.•High detectivity (D*) of 8.19 ×1011 J & of ∼ 309.66%, was observed for the fabricated photodetector.
Development of photo detectors based on different semiconducting materials with high performance has been in progress in recent past, however, there is a lot of difficulties in developing the more effective photo detectors-based devices with high responsivity, detectivity and quantum efficiency. Hence, we have synthesized pure CuS and CuO@CuS core-shell heterostructure based photo detectors with high performance by simple and cost-effective two-step chemical co-precipitation method. The phase purity of CuS and CuO@CuS composite was observed by XRD analysis and the result were verified with Raman spectroscopy studies. Sphere like morphology of pure CuS and core-shell structure formation of CuO@CuS are observed with scanning and transmission electron microscopes. The presence of expected elements has been confirmed with EDX elemental mapping. Light harvesting photodiodes were fabricated by using n-type silicon substrate through drop cost method. Photo sensitive parameters of fabricated diodes were analyzed by I–V characteristics. The p-CuO@CuS (1:1)/n-Si diode owned a maximum photosensitivity (Ps) ∼ 7.76 × 104 %, photoresponsivity (R) ∼ 798.61 mA/W, external quantum efficiency (EQE)∼309.66 % and specific detectivity (D*) ∼ 8.19 × 1011 Jones when compared to p-CuS/n-Si diode. The obtained results revealed that the core/shell heterostructure of CuO@CuS is the most appropriate for photo detection.</description><subject>Chemical precipitation</subject><subject>Copper sulfides</subject><subject>Core-shell structure</subject><subject>Core/shell heterostructure</subject><subject>Cost analysis</subject><subject>Current voltage characteristics</subject><subject>CuS@CuO</subject><subject>Detectors</subject><subject>Heterostructures</subject><subject>Microscopes</subject><subject>Morphology</subject><subject>Parameter sensitivity</subject><subject>Photodetector</subject><subject>Photodiodes</subject><subject>Photoresponse</subject><subject>Photosensitivity</subject><subject>Quantum efficiency</subject><subject>Raman spectroscopy</subject><subject>Semiconductors</subject><subject>Sensors</subject><subject>Silicon substrates</subject><subject>Studies</subject><subject>Transmission electron microscopy</subject><issn>0924-4247</issn><issn>1873-3069</issn><issn>0924-4247</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kU2LFDEQhoMo7jj6A7xIgxcvPZuvTiYIogx-wcIKq-eQTqqdDD1Jm6QH9uJvN82si3rwVJXkqbdS9SL0nOANwURcHjY5mA3FtJ4JZZI9QCuylaxlWKiHaIUV5S2nXF6gJzkfMMaMSfkYXTCGJeECr9DPL_tYYoaQffEnaIytwZfbJg7NYPrkrSngGhsTtHkP41jT4xQrDU0wIeaSZlvmVJmp3c3Xb3fzzWVob3zjfHTQDDE109LCQYGqHUNjpmlcZGuen6JHgxkzPLuLa_Ttw_uvu0_t1fXHz7t3V63tcFdagp1yjgs2gBW9dIqT3goKPSFYKrcdLB04N7bjWAowijPbg-w7cBZ3Qgq2Rm_OutPcH-sthJLMqKfkjybd6mi8_vsl-L3-Hk9adp2gahF4dSeQ4o8ZctFHn23dhwkQ56wp7yhW2y1TFX35D3qIcwp1vEopKrEQ1Yc1ImfKpphzguH-MwTrxV190NVdvbirz-7Wmhd_TnFf8dvOCrw-A1B3efKQdLYeggXnU92-dtH_R_4X5cm44Q</recordid><startdate>20210101</startdate><enddate>20210101</enddate><creator>Gunasekaran, S.</creator><creator>Thangaraju, D.</creator><creator>Marnadu, R.</creator><creator>Chandrasekaran, J.</creator><creator>Shkir, Mohd</creator><creator>Durairajan, A.</creator><creator>Valente, M.A.</creator><creator>Alshaharani, T.</creator><creator>Elango, M.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20210101</creationdate><title>Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications</title><author>Gunasekaran, S. ; Thangaraju, D. ; Marnadu, R. ; Chandrasekaran, J. ; Shkir, Mohd ; Durairajan, A. ; Valente, M.A. ; Alshaharani, T. ; Elango, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c505t-10d9dd463fec6b7d941bc62eb11079d8fc2f44ac54076ea943cbe7b5edc056763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Chemical precipitation</topic><topic>Copper sulfides</topic><topic>Core-shell structure</topic><topic>Core/shell heterostructure</topic><topic>Cost analysis</topic><topic>Current voltage characteristics</topic><topic>CuS@CuO</topic><topic>Detectors</topic><topic>Heterostructures</topic><topic>Microscopes</topic><topic>Morphology</topic><topic>Parameter sensitivity</topic><topic>Photodetector</topic><topic>Photodiodes</topic><topic>Photoresponse</topic><topic>Photosensitivity</topic><topic>Quantum efficiency</topic><topic>Raman spectroscopy</topic><topic>Semiconductors</topic><topic>Sensors</topic><topic>Silicon substrates</topic><topic>Studies</topic><topic>Transmission electron microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gunasekaran, S.</creatorcontrib><creatorcontrib>Thangaraju, D.</creatorcontrib><creatorcontrib>Marnadu, R.</creatorcontrib><creatorcontrib>Chandrasekaran, J.</creatorcontrib><creatorcontrib>Shkir, Mohd</creatorcontrib><creatorcontrib>Durairajan, A.</creatorcontrib><creatorcontrib>Valente, M.A.</creatorcontrib><creatorcontrib>Alshaharani, T.</creatorcontrib><creatorcontrib>Elango, M.</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Sensors and actuators. A. Physical.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gunasekaran, S.</au><au>Thangaraju, D.</au><au>Marnadu, R.</au><au>Chandrasekaran, J.</au><au>Shkir, Mohd</au><au>Durairajan, A.</au><au>Valente, M.A.</au><au>Alshaharani, T.</au><au>Elango, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications</atitle><jtitle>Sensors and actuators. A. Physical.</jtitle><addtitle>Sens Actuators A Phys</addtitle><date>2021-01-01</date><risdate>2021</risdate><volume>317</volume><spage>112373</spage><epage>112373</epage><pages>112373-112373</pages><artnum>112373</artnum><issn>0924-4247</issn><eissn>1873-3069</eissn><eissn>0924-4247</eissn><abstract>[Display omitted]
•Novel high-performance p-CuO@CuS/n-Si photodetectors have been facilely fabricated.•Structural and vibrational studied confirm the synthesis of fabrication of CuO@CuS nanocomposite system.•Core-shell structure like morphology was approved by FESEM & HRTEM analyses.•High Ps of ∼ 7.76 104 % & R ∼ 798.61mA/W was observed for the fabricated photodetector.•High detectivity (D*) of 8.19 ×1011 J & of ∼ 309.66%, was observed for the fabricated photodetector.
Development of photo detectors based on different semiconducting materials with high performance has been in progress in recent past, however, there is a lot of difficulties in developing the more effective photo detectors-based devices with high responsivity, detectivity and quantum efficiency. Hence, we have synthesized pure CuS and CuO@CuS core-shell heterostructure based photo detectors with high performance by simple and cost-effective two-step chemical co-precipitation method. The phase purity of CuS and CuO@CuS composite was observed by XRD analysis and the result were verified with Raman spectroscopy studies. Sphere like morphology of pure CuS and core-shell structure formation of CuO@CuS are observed with scanning and transmission electron microscopes. The presence of expected elements has been confirmed with EDX elemental mapping. Light harvesting photodiodes were fabricated by using n-type silicon substrate through drop cost method. Photo sensitive parameters of fabricated diodes were analyzed by I–V characteristics. The p-CuO@CuS (1:1)/n-Si diode owned a maximum photosensitivity (Ps) ∼ 7.76 × 104 %, photoresponsivity (R) ∼ 798.61 mA/W, external quantum efficiency (EQE)∼309.66 % and specific detectivity (D*) ∼ 8.19 × 1011 Jones when compared to p-CuS/n-Si diode. The obtained results revealed that the core/shell heterostructure of CuO@CuS is the most appropriate for photo detection.</abstract><cop>Switzerland</cop><pub>Elsevier B.V</pub><pmid>33071460</pmid><doi>10.1016/j.sna.2020.112373</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Chemical precipitation Copper sulfides Core-shell structure Core/shell heterostructure Cost analysis Current voltage characteristics CuS@CuO Detectors Heterostructures Microscopes Morphology Parameter sensitivity Photodetector Photodiodes Photoresponse Photosensitivity Quantum efficiency Raman spectroscopy Semiconductors Sensors Silicon substrates Studies Transmission electron microscopy |
| title | Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications |
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