Investigation of split CoFeB/Ta/CoFeB/MgO stacks for magnetic memories applications

Investigation of split CoFeB/Ta/CoFeB/MgO stacks for magnetic memories applications

We report on the static and dynamic magnetic properties of W/CoFeB/Ta/CoFeB/MgO stacks, where the CoFeB layer is split in two by a 0.3 nm-thick Ta "dusting" layer. A total CoFeB thickness between 1.2 and 2.4 nm is studied. Perpendicular magnetic anisotropy is obtained for thickness below 1...

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Veröffentlicht in:Journal of magnetism and magnetic materials 2018, Vol.473
Hauptverfasser: Kaidatzis, A, Gopman, D B, Bran, C, García-Martín, J M, Vázquez, M, Niarchos, D
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container_title Journal of magnetism and magnetic materials
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creator Kaidatzis, A
Gopman, D B
Bran, C
García-Martín, J M
Vázquez, M
Niarchos, D
description We report on the static and dynamic magnetic properties of W/CoFeB/Ta/CoFeB/MgO stacks, where the CoFeB layer is split in two by a 0.3 nm-thick Ta "dusting" layer. A total CoFeB thickness between 1.2 and 2.4 nm is studied. Perpendicular magnetic anisotropy is obtained for thickness below 1.8 nm even at the as-deposited stacks, and it is enhanced after annealing. Saturation magnetization is 1520 (1440) kA/m before (after) annealing, increased compared to non-split CoFeB layers. Ferromagnetic resonance measurements show that high magnetic anisotropy energy may be achieved (effective anisotropy field 0.571 ± 0.003 T), combined to a moderate Gilbert damping (0.030 ± 0.001). We argue that the above characteristics make the split-CoFeB system advantageous for spintronics applications.
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title Investigation of split CoFeB/Ta/CoFeB/MgO stacks for magnetic memories applications
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