Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate

We report on engineering impact ionization characteristics of In 0.53 Ga 0.47 As/Al 0.48 In 0.52 As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to design and demonstrate an APD with low k -value. We design InGaAs/AlInAs SL APDs with three different SL periods (4 ML, 6 ML, and 8 ML) to achieve the same composition as Al 0.4 Ga 0.07 In 0.53 As quaternary random alloy (RA). The simulated results of an RA and the three SLs predict that the SLs have lower k -values than the RA because the electrons can readily reach their threshold energy for impact ionization while the holes experience the multiple valence minibands scattering. The shorter period of SL shows the lower k -value. To support the theoretical prediction, the designed 6 ML and 8 ML SLs are experimentally demonstrated. The 8 ML SL shows k -value of 0.22, which is lower than the k -value of the RA. The 6 ML SL exhibits even lower k -value than the 8 ML SL, indicating that the shorter period of the SL, the lower k -value as predicted. This work is a theoretical modeling and experimental demonstration of engineering avalanche characteristics in InGaAs/AlInAs SLs and would assist one to design the SLs with improved performance for various SWIR APD application.