Evolution of lattice distortions in 4H-SiC wafers with varying doping

Lattice distortions (LD) in 4H-silicon carbide (SiC) wafers were quantified using synchrotron X-ray rocking curve mapping (RCM), and were resolved into their two components of lattice strain (Δd/d) and lattice plane curvature (LPC) for 150 mm diameter wafers. The evolution of these LDs were investig...

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Veröffentlicht in:	Scientific reports 2020-07, Vol.10 (1), p.10845-10845, Article 10845
Hauptverfasser:	Mahadik, Nadeemullah A., Das, Hrishikesh, Stoupin, Stanislav, Stahlbush, Robert E., Bonanno, Peter L., Xu, Xueping, Rengarajan, Varatharajan, Ruland, Gary E.
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301 639/301/1005 639/301/119 639/766/25 639/766/930/1032 639/766/930/12 639/766/930/2735 639/766/930/328 Humanities and Social Sciences Investigations multidisciplinary Science Science (multidisciplinary) Silicon carbide X-rays
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