Skewed electronic band structure induced by electric polarization in ferroelectric BaTiO3

Skewed band structures have been empirically described in ferroelectric materials to explain the functioning of recently developed ferroelectric tunneling junction (FTJs). Nonvolatile ferroelectric random access memory (FeRAM) and the artificial neural network device based on the FTJ system are rapi...

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Veröffentlicht in:	Scientific reports 2020-07, Vol.10 (1), p.10702-10702, Article 10702
Hauptverfasser:	Oshime, Norihiro, Kano, Jun, Ikenaga, Eiji, Yasui, Shintaro, Hamasaki, Yosuke, Yasuhara, Sou, Hinokuma, Satoshi, Ikeda, Naoshi, Janolin, Pierre-Eymeric, Kiat, Jean-Michel, Itoh, Mitsuru, Yokoya, Takayoshi, Fujii, Tatsuo, Yasui, Akira, Osawa, Hitoshi
Format:	Artikel
Sprache:	eng
Schlagworte:	639/301/119/996 639/766/119/996 Humanities and Social Sciences multidisciplinary Neural networks Physics Polarization Problem solving Random access memory Science Science (multidisciplinary) Spectroscopy Thin films
Online-Zugang:	Volltext
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