Reversing abnormal hole localization in high-Al-content AlGaN quantum well to enhance deep ultraviolet emission by regulating the orbital state coupling

AlGaN has attracted considerable interest for ultraviolet (UV) applications. With the development of UV optoelectronic devices, abnormal carrier confinement behaviour has been observed for c -plane-oriented AlGaN quantum wells (QWs) with high Al content. Because of the dispersive crystal field split-off hole band (CH band) composed of p z orbitals, the abnormal confinement becomes the limiting factor for efficient UV light emission. This observation differs from the widely accepted concept that confinement of carriers at the lowest quantum level is more pronounced than that at higher quantum levels, which has been an established conclusion for conventional continuous potential wells. In particular, orientational p z orbitals are sensitive to the confinement direction in line with the conducting direction, which affects the orbital intercoupling. In this work, models of Al 0.75 Ga 0.25 N/AlN QWs constructed with variable lattice orientations were used to investigate the orbital intercoupling among atoms between the well and barrier regions. Orbital engineering of QWs was implemented by changing the orbital state confinement, with the well plane inclined from 0° to 90° at a step of 30° (referred to the c plane). The barrier potential and transition rate at the band edge were enhanced through this orbital engineering. The concept of orbital engineering was also demonstrated through the construction of inclined QW planes on semi- and nonpolar planes implemented in microrods with pyramid-shaped tops. The higher emission intensity from the QWs on the nonpolar plane compared with those on the polar plane was confirmed via localized cathodoluminescence (CL) maps.