Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators
In this study, we investigate the bulk effect of photoresponsive gate insulators on the photoresponse of organic phototransistors (OPTs), using OPTs with poly(4-vinylphenol) layers of two different thicknesses. For the photoresponse, the interplay between the charge accumulation (capacitance) and li...
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| description | In this study, we investigate the bulk effect of photoresponsive gate insulators on the photoresponse of organic phototransistors (OPTs), using OPTs with poly(4-vinylphenol) layers of two different thicknesses. For the photoresponse, the interplay between the charge accumulation (capacitance) and light-absorbance capabilities of a photoresponsive gate insulator was investigated. Although an OPT with a thicker gate insulator exhibits a lower capacitance and hence a lower accumulation capability of photogenerating charges, a thicker poly(4-vinylphenol) layer, in contrast to a thinner one, absorbs more photons to generate more electron-hole pairs, resulting in a higher photoresponse of the device. That is, in these two cases, the degree of light absorption by the photoresponsive gate insulators dominantly governed the photoresponse of the device. Our physical description of the bulk effect of photoresponsive insulators on the performance of OPTs will provide a useful guideline for designing and constructing high-performance organic-based photosensing devices and systems. |
| doi_str_mv | 10.3390/ma13071565 |
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For the photoresponse, the interplay between the charge accumulation (capacitance) and light-absorbance capabilities of a photoresponsive gate insulator was investigated. Although an OPT with a thicker gate insulator exhibits a lower capacitance and hence a lower accumulation capability of photogenerating charges, a thicker poly(4-vinylphenol) layer, in contrast to a thinner one, absorbs more photons to generate more electron-hole pairs, resulting in a higher photoresponse of the device. That is, in these two cases, the degree of light absorption by the photoresponsive gate insulators dominantly governed the photoresponse of the device. Our physical description of the bulk effect of photoresponsive insulators on the performance of OPTs will provide a useful guideline for designing and constructing high-performance organic-based photosensing devices and systems.</description><identifier>ISSN: 1996-1944</identifier><identifier>EISSN: 1996-1944</identifier><identifier>DOI: 10.3390/ma13071565</identifier><identifier>PMID: 32231099</identifier><language>eng</language><publisher>Switzerland: MDPI AG</publisher><subject>Accumulation ; Capacitance ; Dielectric properties ; Electromagnetic absorption ; Insulators ; Interfaces ; Light ; Phototransistors ; Transistors</subject><ispartof>Materials, 2020-03, Vol.13 (7), p.1565</ispartof><rights>2020. This work is licensed under http://creativecommons.org/licenses/by/3.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><rights>2020 by the authors. 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-7a281aae8ef227b5254edd2cc9305140586ae52968c456843829bfba612e7ccf3</citedby><cites>FETCH-LOGICAL-c406t-7a281aae8ef227b5254edd2cc9305140586ae52968c456843829bfba612e7ccf3</cites><orcidid>0000-0003-2164-2849</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC7178102/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC7178102/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,723,776,780,881,27903,27904,53770,53772</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/32231099$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Park, Hea-Lim</creatorcontrib><creatorcontrib>Kim, Min-Hoi</creatorcontrib><creatorcontrib>Kim, Hyeok</creatorcontrib><title>Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators</title><title>Materials</title><addtitle>Materials (Basel)</addtitle><description>In this study, we investigate the bulk effect of photoresponsive gate insulators on the photoresponse of organic phototransistors (OPTs), using OPTs with poly(4-vinylphenol) layers of two different thicknesses. 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Our physical description of the bulk effect of photoresponsive insulators on the performance of OPTs will provide a useful guideline for designing and constructing high-performance organic-based photosensing devices and systems.</description><subject>Accumulation</subject><subject>Capacitance</subject><subject>Dielectric properties</subject><subject>Electromagnetic absorption</subject><subject>Insulators</subject><subject>Interfaces</subject><subject>Light</subject><subject>Phototransistors</subject><subject>Transistors</subject><issn>1996-1944</issn><issn>1996-1944</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNplkU1LJDEQhoO4qLhe_AES8CIL46aSTndyEVT8GBDcw3oOmUz1TGt3MibdA_77zTg6fmxdqqCeeqmXl5BDYKdCaPa7syBYBbKUW2QPtC5HoIti-9O8Sw5SemS5hADF9Q7ZFZwLYFrvkTDuFjEssUPf01DTP_PQh4hpEXxC2nh6H2fWN2696KP1qUmZSLSfxzDM5vRiaJ_oVV2j-0-gWSK9sT3SsU9Da1dnP8mP2rYJD976Pnm4vvp7eTu6u78ZX57fjVzByn5UWa7AWlRYc15NJJcFTqfcOS2YhIJJVVqUXJfKFbJUhci-JvXElsCxcq4W--RsrbsYJh1OXbYXbWsWselsfDHBNubrxjdzMwtLU0GlgPEscPImEMPzgKk3XZMctq31GIZkuFCSV6AAMnr8DX0MQ_TZ3islRQWFytSvNeViSClivXkGmFlFaT6izPDR5_c36Htw4h9OTZtz</recordid><startdate>20200328</startdate><enddate>20200328</enddate><creator>Park, Hea-Lim</creator><creator>Kim, Min-Hoi</creator><creator>Kim, Hyeok</creator><general>MDPI AG</general><general>MDPI</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0003-2164-2849</orcidid></search><sort><creationdate>20200328</creationdate><title>Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators</title><author>Park, Hea-Lim ; Kim, Min-Hoi ; Kim, Hyeok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c406t-7a281aae8ef227b5254edd2cc9305140586ae52968c456843829bfba612e7ccf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Accumulation</topic><topic>Capacitance</topic><topic>Dielectric properties</topic><topic>Electromagnetic absorption</topic><topic>Insulators</topic><topic>Interfaces</topic><topic>Light</topic><topic>Phototransistors</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Hea-Lim</creatorcontrib><creatorcontrib>Kim, Min-Hoi</creatorcontrib><creatorcontrib>Kim, Hyeok</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Hea-Lim</au><au>Kim, Min-Hoi</au><au>Kim, Hyeok</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators</atitle><jtitle>Materials</jtitle><addtitle>Materials (Basel)</addtitle><date>2020-03-28</date><risdate>2020</risdate><volume>13</volume><issue>7</issue><spage>1565</spage><pages>1565-</pages><issn>1996-1944</issn><eissn>1996-1944</eissn><abstract>In this study, we investigate the bulk effect of photoresponsive gate insulators on the photoresponse of organic phototransistors (OPTs), using OPTs with poly(4-vinylphenol) layers of two different thicknesses. 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| source | PubMed Central Open Access; MDPI - Multidisciplinary Digital Publishing Institute; EZB-FREE-00999 freely available EZB journals; PubMed Central; Free Full-Text Journals in Chemistry |
| subjects | Accumulation Capacitance Dielectric properties Electromagnetic absorption Insulators Interfaces Light Phototransistors Transistors |
| title | Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators |
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