Antibacterial Properties of Charged TiN Surfaces for Dental Implant Application

The formation and characterization of positively surface charged TiN surfaces were investigated for improving dental implant survival. Surface nitrogen atoms of a traditional TiN implant were converted to a positive charge by a quaternization reaction which greatly increased the antibacterial effici...

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Veröffentlicht in:ChemistrySelect (Weinheim) 2019-08, Vol.4 (31), p.9185-9189
Hauptverfasser: Carey, Patrick H., Ren, Fan, Jia, Ziqi, Batich, Christopher D, Camargo, Samira E. A., Clark, Arthur E., Craciun, Valentin, Neal, Daniel W., Esquivel‐Upshaw, Josephine F.
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Sprache:eng
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Zusammenfassung:The formation and characterization of positively surface charged TiN surfaces were investigated for improving dental implant survival. Surface nitrogen atoms of a traditional TiN implant were converted to a positive charge by a quaternization reaction which greatly increased the antibacterial efficiency. Ti, TiN, and quaternized TiN samples were incubated with human patient subgingival bacteria for 4 hours at 37 °C in an anaerobic environment with an approximate 40% reduction in counts on the quaternized surface over traditional Ti and TiN. The samples were challenged with Streptococcus Mutans and fluorescent imaging confirmed significant reduction in the quaternized TiN over the traditional Ti and TiN. Contact angle measurement and X‐Ray Photoelectron Spectroscopy (XPS) were utilized to confirm the surface chemistry changes. The XPS results found the charged quaternized nitrogen peak at 399.75 eV that is unique to the quaternized sample. In this study, off the shelf Titanium Nitride implants were subjected to a single‐step rapid reaction to improve their antibacterial efficiency by the conversion of surface nitrogen atoms to positively charged quaternary specie. This conversion greatly improved antibacterial efficiencies against general sub gingival bacteria along with early and late colonizers associated with peri‐implantitis.
ISSN:2365-6549
2365-6549
DOI:10.1002/slct.201901001